Abstract: The invention relates to a dark-field semiconductor wafer inspection device including, in the following order, a light source for emitting an incident beam to a wafer along a first axis, a concentrator that is symmetrical in relation to a plane passing through the first and second axes and is provided with a mirror that is elliptically cut along a plane perpendicular to an axis perpendicular to the first axis and has a generator parallel to the first axis, parallel first and second slits being set up sideways in first and second portions of the concentrator at the points for concentrating the light that is scattered by the wafer and reflected by the second and first portions of the concentrator, respectively, and a photomultiplier using a slit.

Abstract: The invention relates to a dark-field semi-conductor wafer inspection device including, in the following order, a light source for emitting an incident beam to a wafer along a first axis, a concentrator (7) that is symmetrical in relation to a plane passing through the first and second axes and is provided with a mirror that is elliptically cut along a plane perpendicular to an axis perpendicular to the first axis and has a generator parallel to the first axis, parallel first and second slits (13, 14) being set up side-ways in first and second portions (9, 10) of the concentrator at the points for concentrating the light that is scattered by the wafer and reflected by the second and first portions of the concentrator, respectively, and a photomultiplier using a slit.

Abstract: Device for inspecting defects in semiconductor wafers, comprising a member for detecting surface defects using variations in the slope of a surface of the wafer, a member for detecting surface defects using variations in the light intensity reflected by a surface of the wafer, at a plurality of points, a member for detecting light intensity scattered by the surface of the wafer, a light source, and a detecting and classifying mechanism connected upstream of said detecting members.

Abstract: Device for inspecting defects in semiconductor wafers, comprising a member for detecting surface defects using variations in the slope of a surface of the wafer, a member for detecting surface defects using variations in the light intensity reflected by a surface of the wafer, at a plurality of points, a member for detecting light intensity scattered by the surface of the wafer, a light source, and a detecting and classifying mechanism connected upstream of said detecting members.