Abstract: The invention relates to a process for fabricating a 3D-NAND flash memory comprising a first step of electrodepositing an alloy of copper and of a dopant metal selected from manganese and zinc followed by a second step of annealing the alloy to form a first layer of copper and a second layer comprising zinc or manganese, by demixing the alloy.

Abstract: The invention relates to a machine (1) adapted to metallize a cavity of a semi-conductive or conductive substrate such as a structure of the through silicon via type, according to a metallization process comprising the steps consisting of: a) depositing an insulating dielectric layer in the cavity, b) depositing a barrier layer to diffusion of the filling metal, c) filling the cavity by electrodeposition of metal, preferably copper, and d) carrying out annealing of the substrate, characterized in that it comprises a series of wet-processing modules (10-60) configured to conduct steps a), b) and c) by wet-processing in a chemical bath (B) and at least one additional module (70) adapted to conduct annealing step d) of the substrate (S) such that the machine (1) is capable of executing the entire metallization process of the cavity.

Abstract: The invention relates to a machine (1) adapted to metallise a cavity of a semi-conductive or conductive substrate such as a structure of the through silicon via type, according to a metallisation process comprising the steps consisting of: a) depositing an insulating dielectric layer in the cavity, b) depositing a barrier layer to diffusion of the filling metal, c) filling the cavity by electrodeposition of metal, preferably copper, and d) carrying out annealing of the substrate, characterised in that it comprises a series of wet-processing modules (10-60) configured to conduct steps a), b) and c) by wet-processing in a chemical bath (B) and at least one additional module (70) adapted to conduct annealing step d) of the substrate (S) such that the machine (1) is capable of executing the entire metallisation process of the cavity.

Abstract: The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container (10) intended to contain an electrolyte (E), a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), a counter-electrode (30) arranged in the container (10), illumination means (50) comprising a source (51) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction.

Abstract: The present invention relates to an electrodeposition composition intended particularly for coating a semiconductor substrate in order to fabricate structures of the “through via” type for the production of interconnects in integrated circuits. According to the invention, the said solution comprises copper ions in a concentration of between 14 and 120 mM and ethylenediamine, the molar ratio between ethylenediamine and copper being between 1.80 and 2.03 and the pH of the electrodeposition solution being between 6.6 and 7.5. The present invention also relates to the use of the said electrodeposition solution for the deposition of a copper seed layer, and to the method for depositing a copper a seed layer with the aid of the electrodeposition solution according to the invention.

Abstract: The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. According to the invention, this method comprises: a step during which the surface to be coated is brought into contact with an electroplating bath while the surface is not under electrical bias; a step of forming the coating during which the surface is biased; a step during which the surface is separated from the electroplating bath while it is under electrical bias; the aforementioned electroplating bath comprising, in solution in a solvent: a source of copper ions, with a concentration of between 0.4 and 40mM; and at least one copper complexing agent.

Abstract: The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a “through-via” structure for the production of interconnects in three-dimensional integrated circuits. According to the invention, this composition comprises in solution in a solvent: copper ions in a concentration lying between 45 and 1500 mM; a complexing agent for the copper consisting of at least one compound chosen from aliphatic polyamines having 2 to 4 amino groups, preferably ethylenediamine, in a concentration lying between 45 and 3000 mM; the molar ratio between the copper and said complexing agent lying between 0.1 and 5; thiodiglycolic acid in a concentration lying between 1 and 500 mg/l; and optionally a buffer system, in particular ammonium sulfate, in a concentration lying between 0.1 and 3M.

Abstract: The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container (10) intended to contain an electrolyte (E), a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), a counter-electrode (30) arranged in the container (10), illumination means (50) comprising a source (51) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction.

Abstract: The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. According to the invention, this method comprises: a step during which the said surface to be coated is brought into contact with an electroplating bath while the said surface is not under electrical bias; a step of forming the coating during which the said surface is biased; a step during which the said surface is separated from the electroplating bath while it is under electrical bias; the aforementioned electroplating bath comprising, in solution in a solvent: a source of copper ions, with a concentration of between 0.4 and 40 mM; and at least one copper complexing agent.

Abstract: The present invention relates to an electrodeposition composition intended particularly for coating a semiconductor substrate in order to fabricate structures of the “through via” type for the production of interconnects in integrated circuits. According to the invention, the said solution comprises copper ions in a concentration of between 14 and 120 mM and ethylenediamine, the molar ratio between ethylenediamine and copper being between 1.80 and 2.03 and the pH of the electrodeposition solution being between 6.6 and 7.5. The present invention also relates to the use of the said electrodeposition solution for the deposition of a copper seed layer, and to the method for depositing a copper a seed layer with the aid of the electrodeposition solution according to the invention.

Abstract: The invention relates to novel nanoparticles comprising a metal core containing at least one platinoid or an alloy of a platinoid, a first organic coating formed from molecules attached to the surface of the metal core, and a second organic coating formed from molecules different from the molecules forming the first organic coating, and which are grafted onto molecules of the first organic coating. The invention also relates to the use of the nanoparticles as catalysts. The fields of application include devices for producing electrical energy, in particular in fuel cells, devices for detecting or assaying one or more chemical or biological species, in particular in sensors or multisensors, etc.

Abstract: The invention relates to the use of nanoparticles comprising a metal core containing at least one platinoid or an alloy of a platinoid, a first organic coating formed from molecules attached to the surface of the metal core and a second organic coating formed from molecules different from the molecules forming the first organic coating, and which are grafted onto molecules of the first organic coating, as catalysts. The invention also relates to novel nanoparticles that are useful as catalysts. The fields of application: devices for producing electrical energy, in particular in fuel cells, devices for detecting or assaying one or more chemical or biological species, in particular in sensors or multisensors, etc.

Abstract: The object of the present invention is a method of coating a surface of a substrate with copper by electroplating. According to the invention, this method comprises: a step during which the said surface to be coated is brought into contact with an electroplating bath while the said surface is not under electrical bias; a step of forming the coating during which the said surface is biased; a step during which the said surface is separated from the electroplating bath while it is under electrical bias; the aforementioned electroplating bath comprising, in solution in a solvent: a source of copper ions, with a concentration of between 0.4 and 40 mM; and at least one copper complexing agent.

Abstract: A fingerprint sensor includes an array comprising a plurality of capacitive pixel cells. Each of the capacitive pixel cells includes a pair of metal plates and a reset transistor. The reset transistor includes a gate, a source connected to one of the metal plates and a drain connected to the other of the metal plates. A reset buffer generates a reset signal. A regenerator is associated with each reset transistor of each capacitive pixel cell. The regenerator regenerates the reset signal received from the reset buffer to eliminate injection gradient over the array.

Abstract: A narrow array capacitive semiconductor fingerprint detection system includes an array of capacitive sensing elements. The array has a first dimension about the width of a fingerprint and second dimension less than the length of a fingerprint. A scan control unit is coupled to scan the array at a scan rate determined by the speed of finger movement over the array. The scan control unit scans the array capture partial fingerprint images. Output logic is coupled to the array to assemble the captured fingerprint images into a complete image based upon the direction of finger movement over the array. A mouse device is positioned adjacent the array in the path of finger movement over the array. The mouse device is coupled to provide finger movement speed information to the scan control unit. The mouse device is also coupled to provide finger movement direction information to the output logic.

Abstract: A narrow array optical fingerprint detector that substantially eliminates over-sampling of the array measures the speed of a finger moving over the array and scans the array at a rate determined by the speed of movement of the finger. The fingerprint detector measures the speed of finger movement with a transparent cylinder rotatably mounted adjacent the array. The transparent cylinder is mounted to engage the finger and rotate as the finger is swept past the array. A light chopper is mounted for rotation with the cylinder. A photo-sensor is mounted adjacent the light chopper. The photo-sensor produces a signal in response to light being chopped by the light chopper. The photo-sensor is operably connected to scanning circuitry. Each time the scanning circuitry receives a signal from the photo-sensor, the scanning circuitry scans the array.