Patents by Inventor Frederic Teppe

Frederic Teppe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Terahertz electromagnetic wave conversion device
    Patent number: 9018683
    Abstract: The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: April 28, 2015
    Assignees: Tohoku University, Centre National de la Recherche Scientifique (CNRS), Universite Montpellier 2
    Inventors: Taiichi Otsuji, Viacheslav Popov, Wojciech Knap, Yahya Moubarak Meziani, Nina Diakonova, Dominique Coquillat, Frederic Teppe, Denis Fateev, Jesus Enrique Velazquez Perez
  • TERAHERTZ ELECTROMAGNETIC WAVE CONVERSION DEVICE
    Publication number: 20130277716
    Abstract: The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.
    Type: Application
    Filed: December 3, 2010
    Publication date: October 24, 2013
    Applicants: Tohoku University, Universite Montpellier 2, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
    Inventors: Taiichi Otsuji, Viacheslav Popov, Wojciech Knap, Yahya Moubarak Meziani, Nina Diakonova, Dominique Coquillat, Frederic Teppe, Denis Fateev, Jesus Enrique Velazquez Perez