Patents by Inventor Frederic Victor Mikulec

Frederic Victor Mikulec has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9790424
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: October 17, 2017
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Patent number: 9441156
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: September 13, 2016
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Publication number: 20160060519
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Application
    Filed: April 8, 2015
    Publication date: March 3, 2016
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Publication number: 20150203751
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Application
    Filed: August 29, 2014
    Publication date: July 23, 2015
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Patent number: 8828478
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: May 9, 2013
    Date of Patent: September 9, 2014
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Patent number: 8614396
    Abstract: A method for processing iron disilicide for manufacture photovoltaic devices. The method includes providing a first sample of iron disilicide comprising at least an alpha phase entity, a beta phase entity, and an epsilon phase entity. The method includes maintaining the first sample of iron disilicide in an inert environment and subjects the first sample of iron disilicide to a thermal process to form a second sample of iron disilicide. The second sample of iron disilicide comprises substantially beta phase iron disilicide and is characterized by a first particle size. The method includes introducing an organic solvent to the second sample of iron disilicide, forming a first mixture of material comprising the second sample of iron disilicide and the organic solvent. The method processed the first mixture of material including the second sample of iron disilicide using a grinding process.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: December 24, 2013
    Assignee: Stion Corporation
    Inventors: Frederic Victor Mikulec, Bing Shen Gao, Howard W. H. Lee
  • Publication number: 20130240788
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Application
    Filed: May 9, 2013
    Publication date: September 19, 2013
    Applicant: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Patent number: 8481112
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: July 9, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Patent number: 8481113
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: July 9, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Patent number: 8247257
    Abstract: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: August 21, 2012
    Assignee: Stion Corporation
    Inventors: Howard W. H. Lee, Frederic Victor Mikulec, Bing Shen Gao, Jinman Huang
  • Patent number: 8158193
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: April 17, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Publication number: 20120028405
    Abstract: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.
    Type: Application
    Filed: October 6, 2011
    Publication date: February 2, 2012
    Applicant: Stion Corporation
    Inventors: Howard W.H. Lee, Frederic Victor Mikulec, Bing Shen Gao, Jinman Huang
  • Patent number: 8101234
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: January 24, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Patent number: 8058092
    Abstract: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: November 15, 2011
    Assignee: Stion Corporation
    Inventors: Howard W. H. Lee, Frederic Victor Mikulec, Bing Shen Gao, Jinman Huang
  • Publication number: 20110263062
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Application
    Filed: June 10, 2011
    Publication date: October 27, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Publication number: 20110262752
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Application
    Filed: June 10, 2011
    Publication date: October 27, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Publication number: 20100078597
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Application
    Filed: July 27, 2009
    Publication date: April 1, 2010
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriguez-Viejo, Frederic Victor Mikulec
  • Publication number: 20090227065
    Abstract: A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.
    Type: Application
    Filed: September 12, 2008
    Publication date: September 10, 2009
    Applicant: Stion Corporation
    Inventors: HOWARAD W.H. LEE, Frederic Victor Mikulec, Bing Shen Gao, Jinman Huang
  • Patent number: 7566476
    Abstract: A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.
    Type: Grant
    Filed: August 11, 2006
    Date of Patent: July 28, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Klavs F. Jensen, Bashir O. Dabbousi, Javier Rodriquez-Viejo, Frederic Victor Mikulec
  • Publication number: 20090087370
    Abstract: A method for processing iron disilicide for manufacture photovoltaic devices. The method includes providing a first sample of iron disilicide comprising at least an alpha phase entity, a beta phase entity, and an epsilon phase entity. The method includes maintaining the first sample of iron disilicide in an inert environment and subjects the first sample of iron disilicide to a thermal process to form a second sample of iron disilicide. The second sample of iron disilicide comprises substantially beta phase iron disilicide and is characterized by a first particle size. The method includes introducing an organic solvent to the second sample of iron disilicide, forming a first mixture of material comprising the second sample of iron disilicide and the organic solvent. The method processed the first mixture of material including the second sample of iron disilicide using a grinding process.
    Type: Application
    Filed: September 12, 2008
    Publication date: April 2, 2009
    Applicant: Stion Corporation
    Inventors: Frederic Victor Mikulec, Bing Shen Gao, Howard W.H. Lee