Abstract: A method of fabricating at least one single-crystal alloy semiconductor structure. At least one seed, containing an alloying material, on a substrate for growth of at least one single-crystal alloy semiconductor structure is formed. At least one structural form, formed of a host material, on the substrate is crystallized to form the at least one single-crystal alloy semiconductor structure. The at least one structural form is heated such that the material of the at least one structural form has a liquid state. Also, the at least one structural form is cooled, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a main body of the respective structural form away from the respective seed.

Abstract: A discrete wavelength tunable laser capable of switching between a plurality of lasing channels of different wavelengths, the tunable laser comprising: a semiconductor optical amplifier (SOA); a wavelength demultiplexer (Demux), having a Demux input which receives the output from the SOA, and a plurality of Demux outputs, each Demux output defining a different spatial path for a respective lasing channel; each of the respective lasing channels being within the bandwidth of the SOA; a reflector located within each spatial path for reflecting light of the respective lasing channel; and a lasing suppression mechanism located within each lasing channel; wherein one or more desired lasing channels are selected by application of the lasing suppression mechanism in each spatial path other than the one or more spatial paths corresponding to the one or more desired lasing channels.

Abstract: An optoelectronic device and method of manufacturing the same. The device includes: a layer disposed above a substrate, the layer having a first cavity therein, which cavity is at least partially defined by an inclined interface between the cavity and an insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°; and a regrown semiconductor material, providing or forming a part of a waveguide, the regrown semiconductor material being at least partly disposed in the first cavity and including an inclined interface between the regrown semiconductor material and the insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°.

Abstract: An optoelectronic device and method of manufacturing the same. The device includes: a layer disposed above a substrate, the layer having a first cavity therein, which cavity is at least partially defined by an inclined interface between the cavity and an insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°; and a regrown semiconductor material, providing or forming a part of a waveguide, the regrown semiconductor material being at least partly disposed in the first cavity and including an inclined interface between the regrown semiconductor material and the insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°.

Abstract: A discrete wavelength tunable laser capable of switching between a plurality of lasing channels of different wavelengths, the tunable laser comprising: a semiconductor optical amplifier (SOA); a wavelength demultiplexer (Demux), having a Demux input which receives the output from the SOA, and a plurality of Demux outputs, each Demux output defining a different spatial path for a respective lasing channel; each of the respective lasing channels being within the bandwidth of the SOA; a reflector located within each spatial path for reflecting light of the respective lasing channel; and a lasing suppression mechanism located within each lasing channel; wherein one or more desired lasing channels are selected by application of the lasing suppression mechanism in each spatial path other than the one or more spatial paths corresponding to the one or more desired lasing channels.

Abstract: A method of fabricating at least one single-crystal alloy semiconductor structure, comprising: forming at least one seed on a substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material; providing at least one structural form on the substrate which is crystallized to form the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which extends from the at least one seed and a plurality of elements which are connected in spaced relation to the main body; heating the at least one structural form such that the material of the at least one structural form has a liquid state; and cooling the at least one structural form, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the si

Abstract: Apparatus comprising at least one optical device (106) optically coupled to at least one waveguide (111) on an optical chip (100), characterized in that: (i) the optical device (106) is optically aligned with the waveguide (111) by aligning means (114, 116); (ii) the aligning means (114, 116) comprises at least one male member (114) and at least one female (116) member which locate together; (iii) one of the male member (114) and the female member (116) is positioned on the optical chip (100); (iv) the other one of the male member (114) and the female member (116) is positioned on a capping chip (102); and (v) the apparatus includes a mirror (108) for reflecting light from the optical device (106) to the waveguide (111).

Abstract: Apparatus comprising at least one optical device (106) optically coupled to at least one waveguide (111) on an optical chip (100), characterised in that: (i) the optical device (106) is optically aligned with the waveguide (111) by aligning means (114, 116); (ii) the aligning means (114, 116) comprises at least one male member (114) and at least one female (116) member which locate together; (iii) one of the male member (114) and the female member (116) is positioned on the optical chip (100); (iv) the other one of the male member (114) and the female member (116) is positioned on a capping chip (102); and (v) the apparatus includes a mirror (108) for reflecting light from the optical device (106) to the waveguide (111).