Abstract: Consistent with the present disclosure, active devices, such as lasers, optical amplifiers, and photodiodes, are integrated on a first substrate, and other optical devices, such as passive devices including polarization rotators and polarization beam combiners, are provided on a second substrate. An array of lenses is provided between the two substrates to provide a low loss optical connection from the first substrate to the second substrate. In addition, the orientation or position of the lenses can be readily controlled with Microelectromechnical System (MEMS) actuators so that the light can be directed precisely to a desired optical element, such as a waveguide. Consistent with a further aspect of the present disclosure, the lenses may be controlled to be misaligned by varying degrees in order to control the amount of light that is supplied from one substrate to another.

Abstract: An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

Abstract: A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.