Patents by Inventor Frederick Alyious List, III

Frederick Alyious List, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10233566
    Abstract: Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: March 19, 2019
    Assignee: UT-Battelle, LLC
    Inventors: Frederick Alyious List, III, Yijing Y. Stehle, Ivan V. Vlassiouk, Sergei N. Smirnov
  • Publication number: 20180187331
    Abstract: Systems and methods for synthesizing continuous single crystal graphene are provided. A catalytic substrate is drawn through a chemical vapor deposition chamber in a first lengthwise direction while flowing a hydrogen gas through the chemical vapor deposition chamber in the same lengthwise direction. A hydrocarbon precursor gas is supplied directly above a surface of the catalytic substrate. A high concentration gradient of the hydrocarbon precursor at the crystal growth front is generated to promote the growth of a continuous single crystal graphene film while suppressing the growth of seed domains ahead of the crystal growth front.
    Type: Application
    Filed: December 29, 2016
    Publication date: July 5, 2018
    Inventors: Frederick Alyious List, III, Yijing Y. Stehle, Ivan V. Vlassiouk, Sergei N. Smirnov
  • Patent number: 8829930
    Abstract: An apparatus and method of testing electrical impedance of a multiplicity of regions of a photovoltaic surface includes providing a multi-tipped impedance sensor with a multiplicity of spaced apart impedance probes separated by an insulating material, wherein each impedance probe includes a first end adapted for contact with a photovoltaic surface and a second end in operable communication with an impedance measuring device. The multi-tipped impedance sensor is used to contact the photovoltaic surface and electrical impedance of the photovoltaic material is measured between individual first ends of the probes to characterize the quality of the photovoltaic surface.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: September 9, 2014
    Assignee: UT-Battelle, LLC
    Inventors: Frederick Alyious List, III, Enis Tuncer