Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

Abstract: A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer.

Abstract: A material layer deposition method includes supporting a substrate in a preclean module and exposing the substrate to a preclean etchant while supported within the preclean module. The substrate is transferred to a deposition module and exposed to an adsorbate while supported within the deposition module. A material layer is the deposited onto the substrate while supported within the deposition module subsequent to exposing the substrate to the adsorbate. Semiconductor processing systems and computer program products are also described.