Patents by Inventor Frederick C. Wu

Frederick C. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10390009
    Abstract: An adaptive display calibration system includes a display, a photodetector configured to capture light emitted by the display, and a set-top box connected to the display and the photodetector. The set-top box includes processing circuitry configured to transmit one or more test patterns to the display, and receive one or more measurements of the display from the photodetector in response to the test patterns. Additionally, the processing circuitry of the set-top box determines a capability of the display based on the measurements received from the photodetector and programs the set-top box based on the capability of the display.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: August 20, 2019
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventors: Peisong Chen, Richard Hayden Wyman, Gheorghe Berbecel, Frederick George Walls, David C. Wu, Wade Keith Wan
  • Patent number: 9032906
    Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.
    Type: Grant
    Filed: October 16, 2007
    Date of Patent: May 19, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Paul Ma, Kavita Shah, Dien-Yeh Wu, Seshadri Ganguli, Christophe Marcadal, Frederick C. Wu, Schubert S. Chu
  • Publication number: 20120315756
    Abstract: Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.
    Type: Application
    Filed: March 15, 2012
    Publication date: December 13, 2012
    Inventors: Timothy W. Weidman, Arulkumar Shanmugasundram, Kapila Wijekoon, Schubert S. Chu, Frederick C. Wu, Kavita Shah
  • Patent number: 7850779
    Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
    Type: Grant
    Filed: November 6, 2006
    Date of Patent: December 14, 2010
    Assignee: Applied Materisals, Inc.
    Inventors: Paul Ma, Kavita Shah, Dien-Yeh Wu, Seshadri Ganguli, Christophe Marcadal, Frederick C. Wu, Schubert S. Chu
  • Patent number: 7833358
    Abstract: A semiconductor processing chamber is cleaned by introducing a cleaning gas into a processing chamber, striking a plasma in a remote plasma source that is in communication with the processing chamber, measuring the impedance of the plasma, vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture, and flowing the gas mixture through an analyzer and into an exhaust collection assembly. The measurement of the impedance of the plasma in combination with the ruthenium concentration provides an accurate indication of chamber cleanliness.
    Type: Grant
    Filed: April 7, 2006
    Date of Patent: November 16, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Schubert S. Chu, Frederick C. Wu, Christophe Marcadal, Seshadri Ganguli, Dien-Yeh Wu, Kavita Shah, Paul Ma
  • Patent number: 7682946
    Abstract: Embodiments of the invention provide a method for forming a material on a substrate during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a method is provided which includes flowing at least one process gas through at least one conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, sequentially pulsing at least one chemical precursor into the process gas and igniting a plasma from the process gas to deposit a material on the substrate. In one example, the circular gas flow pattern has circular geometry of a vortex, a helix, a spiral, or a derivative thereof. Materials that may be deposited by the method include ruthenium, tantalum, tantalum nitride, tungsten or tungsten nitride. Other embodiments of the invention provide an apparatus configured to form the material during the PE-ALD process.
    Type: Grant
    Filed: November 6, 2006
    Date of Patent: March 23, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Paul Ma, Kavita Shah, Dien-Yeh Wu, Seshadri Ganguli, Christophe Marcadal, Frederick C. Wu, Schubert S. Chu
  • Patent number: 7605083
    Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
    Type: Grant
    Filed: May 28, 2008
    Date of Patent: October 20, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Publication number: 20080268171
    Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.
    Type: Application
    Filed: October 16, 2007
    Publication date: October 30, 2008
    Inventors: PAUL MA, Kavita Shah, Dien-Yeh Wu, Seshadri Ganguli, Christophe Marcadal, Frederick C. Wu, Schubert S. Chu
  • Publication number: 20080227291
    Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
    Type: Application
    Filed: May 28, 2008
    Publication date: September 18, 2008
    Inventors: KEN K. LAI, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Patent number: 7384867
    Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: June 10, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Patent number: 6939804
    Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
    Type: Grant
    Filed: November 18, 2002
    Date of Patent: September 6, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Publication number: 20040014315
    Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
    Type: Application
    Filed: November 18, 2002
    Publication date: January 22, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
  • Publication number: 20030072884
    Abstract: A method of forming a film structure (e.g., film stacks) comprising titanium (Ti) and/or titanium nitride (TiN). The Ti film structure is formed by alternately depositing and then plasma treating thin films (less than about 100 Å thick) of titanium. The TiN film structure is formed by alternately depositing and then plasma treating thin films (less than about 300 Å thick) of titanium nitride. The titanium films are formed using a plasma reaction of titanium tetrachloride (TiCl4) and a hydrogen-containing gas. The titanium nitride films are formed by thermally reacting titanium tetrachloride with a nitrogen-containing gas. The subsequent plasma treatment steps comprise a nitrogen/hydrogen-containing plasma.
    Type: Application
    Filed: October 15, 2001
    Publication date: April 17, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Tong Zhang, Hyoung-Chan Ha, Jeong Soo Byun, Avgerinos Gelatos, Frederick C. Wu
  • Publication number: 20030049931
    Abstract: Refractory metal nitride layers for integrated circuit fabrication are described. The refractory metal nitride layer may be formed by sequentially chemisorbing alternating monolayers of a nitrogen-containing compound and a refractory metal compound onto a substrate. A composite refractory metal nitride layer is also described. The composite refractory metal nitride layer may be formed by sequentially chemisorbing monolayers of a nitrogen-containing compound and two or more refractory metal compounds onto a substrate.
    Type: Application
    Filed: September 19, 2001
    Publication date: March 13, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jeong Soo Byun, Lin Yin, Frederick C. Wu, Ramanujapuram A. Srinivas, Avgerinos Gelatos, Alfred W. Mak, Mei Chang, Moris Kori, Ashok K. Sinha
  • Patent number: 6524952
    Abstract: A method of forming a silicide layer in contact with a silicon substrate. The method comprises forming the silicide layer by supplying a silicon-containing source that is different from the silicon substrate, such that the silicon in the silicide layer originates primarily from the silicon-containing source.
    Type: Grant
    Filed: June 20, 2000
    Date of Patent: February 25, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Ramanujapuram A. Srinivas, Brian Metzger, Shulin Wang, Frederick C. Wu