Abstract: IC fabrication employs the deposition of aluminum as a metallization layer. Frequently, the aluminum is doped with copper in small amounts to improve electric properties. Low temperature deposition of these layers is preferred to ensure the proper microstructure and surface roughness. Low temperature deposition (below about 300° C.) results in the formation of copper precipitates which can be difficult to remove. Annealing the layer formed, either prior to, or after formation of capping layers and additional layers thereon, drives the copper precipitate back into solution, permitting small dimension fabrication.