Abstract: A process of forming an epitaxial metal silicide layer on a silicon substrate is disclosed. A thin layer of a first metal that will form an oxide in preference to silicon is initially deposited on the substrate. A preferred first metal is titanium. A layer of palladium, platinum or iridium is deposited thereover. An exceptionally uniform, conductive layer of metal silicide is thereby formed by epitaxial growth without the necessity of a high temperature anneal. The disclosed process is particularly useful in forming ultra thin metal silicide Schottky barriers in devices such as infrared imaging arrays.

Abstract: A universal self-aligning rack for carrying and holding substrates of different sizes and shapes during the processing of the substrates. The rack includes first and second spaced substrate supports which are pivotal about parallel axes. Each support includes a pair of spaced elongated elements parallel to the axes, formed with tapered circumferential grooves oriented perpendicularly to the axes. The substrates to be supported are arranged parallel to one another in planes perpendicular to the axes and are supported at their edges in the grooves in respective elongated elements, which elements pivot to appropriate supporting positions in response to the placement of the substrates in the rack.