Abstract: The threshold voltages of particular nonvolatile memory cells on a word line are selectively increased on a column by column (cell by cell) basis. A selective program is performed on some of the cells, and simultaneously a program inhibit on other of the cells, resulting in all of the cells having a threshold voltage that falls between a minimum acceptable value and a maximum acceptable value.

Abstract: The threshold voltages of particular nonvolatile memory cells on a word line are selectively increased on a column by column (cell by cell) basis. A selective program is performed on some of the cells, and simultaneously a program inhibit on other of the cells, resulting in all of the cells having a threshold voltage that falls between a minimum acceptable value and a maximum acceptable value.

Abstract: A programmable latch circuit (100) can include a programmable data circuit (104) with a data load path (116) that can enable a data value to be recalled into a volatile latch (102). A data load path (116) can be formed with devices (P100-P102) having low threshold voltages. Data can be loaded via data load path at lower power supply voltages levels, such as on power-on and/or reset operations. Other embodiments disclose, self-test circuits, full redundancy capabilities, and resistors for limiting current draw in an anti-fuse program operation.