Patents by Inventor Frederick M. Carlson

Frederick M. Carlson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190338442
    Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
    Type: Application
    Filed: July 16, 2019
    Publication date: November 7, 2019
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai
  • Publication number: 20190284715
    Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
    Type: Application
    Filed: March 27, 2014
    Publication date: September 19, 2019
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai
  • Patent number: 10415151
    Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: September 17, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai
  • Patent number: 10179958
    Abstract: An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: January 15, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC
    Inventors: Peter L. Kellerman, Brian D. Kernan, Frederick M. Carlson, Dawei Sun, David Morrell
  • Patent number: 10106911
    Abstract: An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: October 23, 2018
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Frederick M. Carlson, Brian T. Helenbrook
  • Patent number: 10030317
    Abstract: An apparatus may include a crucible configured to contain the melt, the melt having an exposed surface separated from a floor of the crucible by a first distance, a housing comprising a material that is non-contaminating to the melt, the housing comprising a plurality of sidewalls and a top that are configured to contact the melt, and a plurality of heating elements isolated from the melt and disposed along a transverse direction perpendicular to a pulling direction of the crystalline sheet, the plurality of heating elements being individually powered, wherein the plurality of heating elements are disposed at a second set of distances from the exposed surface of the melt that are less than the first distance, and wherein the plurality of heating elements are configured to vary a heat flux profile along the transverse direction when power is supplied individually to the plurality of heating elements.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: July 24, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Brian Mackintosh, Nandish Desai
  • Patent number: 9957636
    Abstract: A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: May 1, 2018
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Peter L. Kellerman, Brian Mackintosh, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai, Dawei Sun, Frank Sinclair
  • Publication number: 20180080142
    Abstract: An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.
    Type: Application
    Filed: March 10, 2017
    Publication date: March 22, 2018
    Inventors: Peter L. Kellerman, Brian D. Kernan, Frederick M. Carlson, Dawei Sun, David Morrell
  • Publication number: 20180047864
    Abstract: A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.
    Type: Application
    Filed: March 27, 2014
    Publication date: February 15, 2018
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter L. Kellerman, Brian Mackintosh, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai, Dawei Sun, Frank Sinclair
  • Patent number: 9587324
    Abstract: An apparatus for processing a melt may include a crucible configured to contain the melt, where the melt has an exposed surface that is separated from a floor of the crucible by a first distance. The apparatus may further include a submerged heater comprising a heating element and a shell disposed between the heating element and the melt, wherein the heating element does not contact the melt. The heating element may be disposed at a second distance with respect to the exposed surface of the melt that is less than the first distance.
    Type: Grant
    Filed: May 12, 2014
    Date of Patent: March 7, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frederick M. Carlson, Peter L. Kellerman, David Morrell, Brian Mackintosh, Nandish Desai
  • Publication number: 20170037535
    Abstract: An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.
    Type: Application
    Filed: October 4, 2016
    Publication date: February 9, 2017
    Inventors: Frederick M. Carlson, Brian T. Helenbrook
  • Patent number: 9464364
    Abstract: An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.
    Type: Grant
    Filed: November 9, 2011
    Date of Patent: October 11, 2016
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Frederick M. Carlson, Brian T. Helenbrook
  • Publication number: 20160108549
    Abstract: An apparatus may include a crucible configured to contain the melt, the melt having an exposed surface separated from a floor of the crucible by a first distance, a housing comprising a material that is non-contaminating to the melt, the housing comprising a plurality of sidewalls and a top that are configured to contact the melt, and a plurality of heating elements isolated from the melt and disposed along a transverse direction perpendicular to a pulling direction of the crystalline sheet, the plurality of heating elements being individually powered, wherein the plurality of heating elements are disposed at a second set of distances from the exposed surface of the melt that are less than the first distance, and wherein the plurality of heating elements are configured to vary a heat flux profile along the transverse direction when power is supplied individually to the plurality of heating elements.
    Type: Application
    Filed: October 17, 2014
    Publication date: April 21, 2016
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Brian Mackintosh, Nandish Desai
  • Publication number: 20150322590
    Abstract: An apparatus for processing a melt may include a crucible configured to contain the melt, where the melt has an exposed surface that is separated from a floor of the crucible by a first distance. The apparatus may further include a submerged heater comprising a heating element and a shell disposed between the heating element and the melt, wherein the heating element does not contact the melt. The heating element may be disposed at a second distance with respect to the exposed surface of the melt that is less than the first distance.
    Type: Application
    Filed: May 12, 2014
    Publication date: November 12, 2015
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frederick M. Carlson, Peter L. Kellerman, David Morrell, Brian Mackintosh, Nandish Desai
  • Publication number: 20130112135
    Abstract: An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.
    Type: Application
    Filed: November 9, 2011
    Publication date: May 9, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Frederick M. Carlson, Brian T. Helenbrook
  • Patent number: 7033443
    Abstract: The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: April 25, 2006
    Assignee: Axcelis Technologies, Inc.
    Inventors: Peter L. Kellerman, Victor M. Benveniste, Frederick M. Carlson
  • Publication number: 20040187788
    Abstract: The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.
    Type: Application
    Filed: March 28, 2003
    Publication date: September 30, 2004
    Inventors: Peter L. Kellerman, Victor M. Benveniste, Frederick M. Carlson
  • Patent number: 6735378
    Abstract: A thermal device with a container having a surface exposed to the substrate, wherein the container further has a heat source and a plurality of thermal shields situated between the surface exposed to the substrate and the heat source. The thermal shields are spaced from one another by a predetermined distance defining one or more gaps therebetween, wherein the predetermined distance is associated with a mean free path of a gas residing therein. Alternatively, the predetermined distance is variable. A pressure of a gas residing within the one or more gaps is controlled, wherein the pressure of the gas switches the thermal conductivity of the gas between generally conductive and generally non-conductive.
    Type: Grant
    Filed: May 29, 2003
    Date of Patent: May 11, 2004
    Assignee: Axcelis Technologies, Inc.
    Inventors: Peter L. Kellerman, Frederick M. Carlson