Abstract: A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.

Abstract: A diode flood gun for introducing an amplified current of low energy electrons into an ion beam for neutralizing charge build up on a target such as a semiconductor wafer during irradiation by the beam. The low energy, amplified current is effected by introducing an inert gas into the flood gun.

Abstract: A method for operating an ion source having a filament-cathode and an anode. The method includes supplying direct current electrical power between the anode and the filament-cathode characterized by substantially constant arc current there between and varying arc voltage on the filament-cathode. Direct current electrical power is also supplied across the filament-cathode. The value of the arc voltage is monitored and the magnitude of electrical power supplied to the filament-cathode is altered in response to detected changes in the arc voltage to return the arc voltage to substantially a preset reference value. The monitoring step and the altering step are carried out at regular preset intervals. The altering step includes deriving an filament power error signal as a prearranged function which includes the difference in values between the monitored arc voltage and the preset reference value multiplied by a predefined integral gain value.

Abstract: An ion implantation system includes a beam generating arrangement for generating an ion beam characterized by good beam stability and for directing the ion beam along a prearranged path. A beam stopping arrangement is disposed in the path of the beam for stopping and collecting the ions in the beam. A workpiece scanning arrangement is positioned upstream of the beam stopping arrangement for scanning a workpiece through the beam in a prearranged combined fast scan directional motion and a slow scan directional motion with the slow scan directional motion being characterized by an end of scan position in which the ion beam falls completely on the beam stopping arrangement.