Abstract: Color image sensors and systems are provided. A sensor as disclosed includes a plurality of color sensing pixels disposed within an array, each of which includes a plurality of sub-pixels. Each color sensing pixel within the image sensor is associated with a set of diffraction features and a plurality of wavelength selective filters that only partially overlay an area of the pixel. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. Color information regarding light incident on a pixel can be determined by applying ratios of signals obtained by pairs of included sub-pixels and calibrated ratios for different colors to a set of equations.

Abstract: Color image sensors and systems are provided. A sensor as disclosed includes a plurality of color sensing pixels disposed within an array, each of which includes a plurality of sub-pixels. Each color sensing pixel within the image sensor is associated with a set of diffraction features and a plurality of wavelength selective filters that only partially overlay an area of the pixel. The diffraction features can be formed from materials having an index of refraction that is higher than an index of refraction of the surrounding material. Color information regarding light incident on a pixel can be determined by applying ratios of signals obtained by pairs of included sub-pixels and calibrated ratios for different colors to a set of equations.

Abstract: Methods, sensors, and systems for determining a spectral band of light incident on one or more pixels are provided. Each pixel includes a set of sub-pixels. Light incident on an area of the pixel is diffracted by a set of diffraction elements, producing a diffraction pattern across the sub-pixels. Outputs from the sub-pixels are provided to application programming executed by a processor to produce an output that includes an indication of one of a plurality of spectral bands that the light incent on the pixel belongs. The application programming can implement a neural network that has been trained to assign the light incident on an area of a pixel to one spectral band in the plurality of spectral bands. The number of spectral bands to which light incident on the pixel can be assigned can be greater than the number of sub-pixels included in the pixel.

Abstract: Binning in a hybrid pixel structure of image pixels and event vision sensor (EVS) pixels. In one embodiment, the imaging sensor includes a pixel array including a plurality of pixel circuits and a plurality of binning transistors. A first portion of the plurality of pixel circuits individually includes an intensity photodiode. A second portion of the plurality of pixel circuits individually includes an event vision sensor (EVS) photodiode. The plurality of binning transistors is configured to bin together at least one of the first portion or the second portion.

Abstract: Binning in a hybrid pixel structure of image pixels and event vision sensor (EVS) pixels. In one embodiment, the imaging sensor includes a pixel array including a plurality of pixel circuits and a plurality of binning transistors. A first portion of the plurality of pixel circuits individually includes an intensity photodiode. A second portion of the plurality of pixel circuits individually includes an event vision sensor (EVS) photodiode. The plurality of binning transistors is configured to bin together at least one of the first portion or the second portion.

Abstract: Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.

Abstract: A pixelated image sensor capable of simultaneously supporting an EVS mode and an image-frame capture mode of operation. An individual pixel of the sensor comprises two distinct sets of subpixels involved in the two modes, respectively, and at least two corresponding, functionally different and independent electrical circuits. The metal interconnect structure of the image-sensor IC is implemented using a wiring topology in which spatial overlap between the wirings of the two electrical circuits is optimized (e.g., minimized) to reduce inter-circuit crosstalk when the two circuits are active at the same time. Such wiring topology may be beneficial, e.g., due to the resulting improvements in the image quality for both operating modes.

Abstract: Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.

Abstract: Binning in a hybrid pixel structure of image pixels and event vision sensor (EVS) pixels. In one embodiment, the imaging sensor includes a pixel array including a plurality of pixel circuits and a plurality of binning transistors. A first portion of the plurality of pixel circuits individually includes an intensity photodiode. A second portion of the plurality of pixel circuits individually includes an event vision sensor (EVS) photodiode. The plurality of binning transistors is configured to bin together at least one of the first portion or the second portion.

Abstract: A pixelated image sensor capable of simultaneously supporting an EVS mode and an image-frame capture mode of operation. An individual pixel of the sensor comprises two distinct sets of subpixels involved in the two modes, respectively, and at least two corresponding, functionally different and independent electrical circuits. The metal interconnect structure of the image-sensor IC is implemented using a wiring topology in which spatial overlap between the wirings of the two electrical circuits is optimized (e.g., minimized) to reduce inter-circuit crosstalk when the two circuits are active at the same time. Such wiring topology may be beneficial, e.g., due to the resulting improvements in the image quality for both operating modes.

Abstract: A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. A control circuit provides a separately-controlled and independent voltage that is applied to each of the linear microshutter elements. A controller sets the respective voltages applied to each of the linear microshutter elements.

Abstract: A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.