Abstract: A voltage controlled resistive device is provided by coupling a vertical bipolar transistor (34) with a junction field effect transistor (36) through a well region 18, which functions as both a drain region for the junction field effect transistor (36), and as a collector region for the vertical bipolar transistor (34). The voltage controlled resistive device of the invention provides a means of varying the output current of the vertical bipolar transistor (34) by application of a variable voltage level to the gate region (26) of the junction field effect transistor (36). To obtain proper junction bias characteristics and a compact device size, the source region (24), the gate region (26) of the junction field effect transistor (36), and the base region (22) of the vertical bipolar transistor (34) are formed in a single well region (18) of a semiconductor substrate (10).