Patents by Inventor Frederico Garza

Frederico Garza has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7009193
    Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: March 7, 2006
    Assignee: Infineon Technologies Richmond, LP
    Inventors: Frederico Garza, Michael Wright, Karl Peterson
  • Patent number: 7001856
    Abstract: A process uses pressure changes and a pressure compensation factor to estimate the rate at which neutral atoms are implanted. While implanting a first wafer using a first pressure compensation factor, the rate at which ions are implanted is determined. The first wafer is moved radially with respect to an ion beam while implanting ions into the first wafer so as to achieve a uniform total dose based on the rate at which ions are implanted and the estimated rate at which neutral atoms are implanted. The pressure is determined while implanting the first wafer, determining the pressure. A second pressure compensation factor is selected, that would have achieved a uniform rate of implanted ions plus implanted neutral atoms across a surface of the first wafer. The second pressure compensation factor is different from the first pressure compensation factor. The second pressure compensation factor is used to implant a second wafer. The second wafer is tested by forming a sheet resistance contour map.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: February 21, 2006
    Assignee: Infineon Technologies Richmond, LP
    Inventors: Frederico Garza, Karl Peterson, Michael Wright
  • Publication number: 20050095800
    Abstract: A process uses pressure changes and a pressure compensation factor to estimate the rate at which neutral atoms are implanted. While implanting a first wafer using a first pressure compensation factor, the rate at which ions are implanted is determined. The first wafer is moved radially with respect to an ion beam while implanting ions into the first wafer so as to achieve a uniform total dose based on the rate at which ions are implanted and the estimated rate at which neutral atoms are implanted. The pressure is determined while implanting the first wafer, determining the pressure. A second pressure compensation factor is selected, that would have achieved a uniform rate of implanted ions plus implanted neutral atoms across a surface of the first wafer. The second pressure compensation factor is different from the first pressure compensation factor. The second pressure compensation factor is used to implant a second wafer. The second wafer is tested by forming a sheet resistance contour map.
    Type: Application
    Filed: October 31, 2003
    Publication date: May 5, 2005
    Applicant: Infineon Technologies Richmond, LP
    Inventors: Frederico Garza, Karl Peterson, Michael Wright
  • Publication number: 20050092595
    Abstract: A device to implant impurities into a semiconductor wafer had a beam gun to shoot ions at a semiconductor wafer, a pair of ion gauges, and ion gauge controller to supply power to, and obtain information corresponding to a number of ions from, one of the ion gauges. The gauge controller has a parameter output, a control output and a pair of control inputs respectively associated with the pair of ion gauges, such that when a control signal is supplied to one of the control inputs, the ion gauge controller supplies power to, and obtains information corresponding to a number of ions from, the respectively associated ion gauge. The control output produces the control signal when either of the ion gauges is activated. The parameter output selectively produces a parameter signal based on a recipe selection. A first delay circuit connects the control output to one of the control inputs, after a delay, when the parameter output is on.
    Type: Application
    Filed: October 31, 2003
    Publication date: May 5, 2005
    Applicant: Infineon Technologies Richmond, LP
    Inventors: Karl Peterson, Michael Wright, Frederico Garza
  • Publication number: 20050092938
    Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.
    Type: Application
    Filed: October 31, 2003
    Publication date: May 5, 2005
    Applicant: Infineon Technologies Richmond, LP
    Inventors: Frederico Garza, Michael Wright, Karl Peterson