Abstract: A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. Their reflectivity can be enhanced by barrier layers. The multilayer systems according to the invention have protective layers comprising iridium. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the respective layer. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity.

Abstract: In order to reduce contamination of optical elements which comprise a multilayer system on a substrate, it is proposed that the layer material and/or the layer thickness of at least one layer of the multilayer system are/is selected such that the standing wave which forms during reflection of the irradiated operating wavelength, forms a node of the electrical field intensity (node condition) in the area of the free interface of the multilayer system. Furthermore, a method for determining a design of a multilayer system, as well as a manufacturing process and a lithography apparatus are described.

Abstract: A process for the production of optical broad band elements for the ultra violet to hard x-ray wavelength range, especially the extreme ultra violet wavelength range is described. A set from series of layers made of at least two materials in relation to the layer sequence is designed and numerical optimization of the the layer thicknesses and of the cap layer thickness is performed. The materials are chosen in such a way that two successive layers interact with each other as little as possible or controllably. The set can be formed from MO2C— and Si-layers. The numerical optimization takes into account interlayers of a certain thickness and composition.

Abstract: The invention relates to a process for manufacturing multilayer systems for mirrors in the extreme ultraviolet and x-ray wavelength range, whereby at least one layer, in particular made of Mo, Si, Ru, C., B, Rb, Sr, Y, Cr, Sc or components thereof, is at least partly deposited with ion-beam assistance. In order to improve the surface properties of multilayer systems and to achieve the highest possible reflectivity the ion energy of the ion-beam is selected as an energy equivalent to or below the layer's sputtering threshold.

Abstract: Multi-layer mirror for radiation with a wavelength in the wavelength range between 0.1 nm and 30 nm (the so-called XUV range), comprising a stack of thin films substantially comprising scattering particles which scatter the radiation, which thin films are separated by separating layers with a thickness in the order of magnitude of the wavelength of the radiation, which separating layers substantially comprise non-scattering particles which do not scatter the radiation, wherein the non-scattering particles are substantially particles of lithium (Li), and method for manufacturing such a mirror.

Abstract: A radiation source includes an anode and a cathode for creating a discharge in a vapor in a space between anode and cathode and to form a plasma of a working vapor so as to generate electromagnetic radiation. The cathode defines a hollow cavity in communication with the discharge region through an aperture that has a substantially annular configuration around a central axis of said radiation source so as to initiate said discharge. A driver vapor is supplied to the cathode cavity and the working vapor is supplied in a region around the central axis in between anode and cathode.

Abstract: A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. Their reflectivity can be enhanced by barrier layers. The multilayer systems according to the invention have protective layers comprising iridium. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the respective layer. The multilayer systems according to the invention are not only resistant to contamination and oxidation, but can also be cleaned if necessary, without losing reflectivity.

Abstract: A radiation source includes an anode and a cathode for creating a discharge in a vapor in a space between anode and cathode and to form a plasma of a working vapor so as to generate electromagnetic radiation. The cathode defines a hollow cavity in communication with the discharge region through an aperture that has a substantially annular configuration around a central axis of said radiation source so as to initiate said discharge. A driver vapor is supplied to the cathode cavity and the working vapor is supplied in a region around the central axis in between anode and cathode.

Abstract: When coating substrates it is frequently desired that the layer thickness should be a certain function of the position on the substrate to be coated. To control the layer thickness a mask is conventionally arranged between the coating particle source and the substrate. This leads to undesirable shadow effects. In addition, is has so far only been possible to obtain rotationally symmetrical thickness distributions. It is now proposed that masks should be used having apertures aligned according to a regular grid on the mask surface. Such a mask with a mask holder comprising a base frame (2), an intermediate frame (3) and a mask frame (4) which are joined one to the other by means of double hinges (5a, a′, b, b′), is moved arbitrarily in the mask plane. By this means arbitrary thickness distributions can be achieved when coating substrates at reasonable cost.

Abstract: Photodiodes and charged-coupled devices show a drop in measuring sensitivity under prolonged exposure to radiation. This is due to oxidation and/or contamination of the active surface of the photodiodes or the charged-coupled devices.

Abstract: A radiation source includes an anode and a cathode for creating a discharge in a vapor in a space between anode and cathode and to form a plasma of a working vapor so as to generate electromagnetic radiation. The cathode defines a hollow cavity in communication with the discharge region through an aperture that has a substantially annular configuration around a central axis of said radiation source so as to initiate said discharge. A driver vapor is supplied to the cathode cavity and the working vapor is supplied in a region around the central axis in between anode and cathode.

Abstract: Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum environment with certain partial pressures of water or oxygen, which causes a serious reduction in reflectivity. The multilayer system according to the invention will have a long life with constantly high reflectivity. The multilayer systems according to the invention have protective layers made from ruthenium, aluminium oxide, silicon carbide, molybdenum carbide, carbon, titanium nitride or titanium dioxide. The multilayer systems according to the invention are produced by direct, ion-beam-supported growth of the protective layer or, except in the case of ruthenium, by mixing aluminium or titanium with oxygen or nitrogen at atomic level, with ion-beam support, to product an outermost protective layer with ion-beam support.

Abstract: A method for the production of multi-layer systems with N layers having predetermined thickness, especially for the production of multi-layer systems for wavelength ranges in the extreme ultraviolet and soft X-ray wavelength range is described, in which N layers are deposited and if need be one or more layers are partially removed after deposited and in wich at the same time as deposition and/or removal of layers, the layers' reflectivity dependent on layer thickness is measured. The method includes the following steps: Calculation of a reflectivity-time curve of the multi-layer system to be produced Determination of points in time ti (i=1, 2, . . . , N), at which the deposition of the i-th layer is to be stopped; and if need be determination of points in time ti′ (i=1, 2, . . .

Abstract: A radiation source of a radiation system of a lithographic projection apparatus includes a primary jet nozzle 10 constructed and arranged to eject a primary gas or liquid 15 in a first direction; a supply 11 for the primary gas or liquid which is to be brought into an excited energy state when ejected from the primary nozzle 10 and is to emit ultraviolet electromagnetic radiation when falling back to a lower energy state; an exciting mechanism such as a laser 30 for bringing the primary gas or liquid into the excited energy state; a secondary jet nozzle 20 constructed and arranged to eject a secondary gas or liquid 25 in the first direction and positioned aside, possibly enclosing, the primary jet nozzle 10; and a supply 21 for the secondary gas or liquid.

Abstract: A radiation source of a radiation system of a lithographic projection apparatus comprises electrodes for creating a discharge in a space between them such that the discharge collapses into a pinch volume. The collapsing discharge creates a highly ionized, high temperature plasma in the pinch volume. A working fluid is ejected from a jet nozzle into the pinching volume and is thereby raised to a high temperature state and emits extreme ultraviolet radiation.

Abstract: Radiation Source, Lithographic Apparatus, Device Manufacturing Method, and Device Manufactured Thereby A radiation source includes an anode and a cathode for creating a discharge in a vapor in a space between anode and cathode and to form a plasma of a working vapor so as to generate electromagnetic radiation. The cathode defines a hollow cavity in communication with the discharge region through an aperture that has a substantially annular configuration around a central axis of said radiation source so as to initiate said discharge. A driver vapor is supplied to the cathode cavity and the working vapor is supplied in a region around the central axis in between anode and cathode.

Abstract: 1. Multilayer system and its production.

Abstract: A method for the production of multi-layer systems with N layers having predetermined thickness, especially for the production of multi-layer systems for wavelength ranges in the extreme ultraviolet and soft X-ray wavelength range is described, in which N layers are deposited and if need be one or more layers are partially removed after deposited and in wich at the same time as deposition and/or removal of layers, the layers' reflectivity dependent on layer thickness is measured.

Abstract: A radiation source of a radiation system of a lithographic projection apparatus comprises electrodes for creating a discharge in a space between them such that the discharge collapses into a pinch volume. The collapsing discharge creates a highly ionized, high temperature plasma in the pinch volume. A working fluid is ejected from a jet nozzle into the pinching volume and is thereby raised to a high temperature state and emits extreme ultraviolet radiation.