Abstract: The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.

Abstract: A method for removing particles from a mask system for a projection exposure apparatus, including the following method steps: detecting the particle in the mask system, providing laser radiation, and removing the particle by irradiating the particle with laser radiation. The wavelength of the laser radiation corresponds to that of used radiation used by the projection exposure apparatus.

Abstract: The invention relates to a method for removing particles from a mask system for a projection exposure apparatus, comprising the following method steps: detecting the particle in the mask system, providing laser radiation, removing the particle by irradiating the particle with laser radiation. According to the invention, the wavelength of the laser radiation corresponds to that of used radiation used by the projection exposure apparatus.

Abstract: The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Abstract: Provision is made of a method for determining a distance between a first structure element on a substrate and a second structure element, comprising the following steps: providing a first series of first images, wherein each of the first images comprises at least the first structure element, providing a second series of second images, wherein each of the second images comprises at least the second structure element. The method includes, for each image of the first and second series: determining a respective correlation function from a respective first image of the first series and a respective second image of the second series. The method includes determining an ensemble correlation function from the correlation functions, and determining the distance from the ensemble correlation function. Furthermore, a microscope for carrying out the method is provided.

Abstract: The present application relates to a method for examining at least one element of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) examining the at least one element with light in the EUV wavelength range; and (b) determining the behavior of the at least one element in the EUV wavelength range.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Abstract: In a method for localizing defects on a substrate for EUV masks, a phase contrast optical unit having a phase mask is used for examining the substrate.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Abstract: A reflective mask inspection system comprises a short wavelength radiation source for irradiating a reflective mask. A detector system detects the short wavelength radiation reflected from the reflective mask and a controller compares reflectance images of the reflective mask from the detector to characterize the mask. The system analyzes the spatially resolved reflectance characteristics of the substrate from different angles with respect to normal to the substrate and/or at different angles of rotation of the substrate. This information can be used to then analyze the mask for buried defects and then characterize those defects. This technique improves over current systems that rely on atomic force microscopes, which can only provide surface information.

Abstract: The present application relates to a method for examining at least one element of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) examining the at least one element with light in the EUV wavelength range; and (b) determining the behavior of the at least one element in the EUV wavelength range.

Abstract: Provision is made of a method for determining a distance between a first structure element on a substrate and a second structure element, comprising the following steps: providing a first series of first images, wherein each of the first images comprises at least the first structure element, providing a second series of second images, wherein each of the second images comprises at least the second structure element. The method includes, for each image of the first and second series: determining a respective correlation function from a respective first image of the first series and a respective second image of the second series. The method includes determining an ensemble correlation function from the correlation functions, and determining the distance from the ensemble correlation function. Furthermore, a microscope for carrying out the method is provided.

Abstract: A method for producing a mask for the extreme ultraviolet wavelength range proceeding from a mask blank having defects is provided. The method includes classifying the defects into at least one first group and one second group; optimizing the arrangement of an absorber pattern on the mask blank in order to compensate for a maximum number of the defects of the first group by means of the arranged absorber pattern; and applying the optimized absorber pattern to the mask blank.

Abstract: A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Abstract: A reflective mask inspection system comprises a short wavelength radiation source for irradiating a reflective mask. A detector system detects the short wavelength radiation reflected from the reflective mask and a controller compares reflectance images of the reflective mask from the detector to characterize the mask. The system analyzes the spatially resolved reflectance characteristics of the substrate from different angles with respect to normal to the substrate and/or at different angles of rotation of the substrate. This information can be used to then analyze the mask for buried defects and then characterize those defects. This technique improves over current systems that rely on atomic force microscopes, which can only provide surface information.