Abstract: A monolithic sensor arrangement, a manufacturing method and a measurement method are disclosed. In an embodiment a monolithic gas sensor arrangement includes a sensor including a first transducer with a first sensitive layer and a second transducer with a second sensitive layer, and a readout circuit configured to generate a first measurement signal and a second measurement signal depending on the first and second transducers, wherein the sensor arrangement is a humidity sensor arrangement, wherein the first and second sensitive layers are configured to absorb water molecules, and wherein the first and second sensitive layers differ from each other in at least one property.

Abstract: In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Abstract: In an embodiment a sensor device include a first sensor including a heating element configured to heat up the first sensor in a controllable manner and a second sensor thermally coupled to the heating element of the first sensor such that the heating element is further configured to heat up the second sensor in a controllable manner.

Abstract: A sensor semiconductor device comprises a transducer which comprises a capacitor with at least two electrodes. The transducer further comprises a polymer which is arranged between at least two electrodes of the capacitor, and a top surface of the transducer. The polymer is able to absorb water and the top surface is arranged such that it is exposed to the environment of the sensor semiconductor device. Furthermore, at least a part of the top surface is superhydrophobic and the sensor semiconductor device is capable of measuring the humidity of the environment of the sensor semiconductor device.

Abstract: In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Abstract: A monolithic sensor arrangement, a manufacturing method and a measurement method are disclosed. In an embodiment a monolithic gas sensor arrangement includes a sensor including a first transducer with a first sensitive layer and a second transducer with a second sensitive layer, and a readout circuit configured to generate a first measurement signal and a second measurement signal depending on the first and second transducers, wherein the sensor arrangement is a humidity sensor arrangement, wherein the first and second sensitive layers are configured to absorb water molecules, and wherein the first and second sensitive layers differ from each other in at least one property.

Abstract: A sensor semiconductor device comprises a transducer which comprises a capacitor with at least two electrodes. The transducer further comprises a polymer which is arranged between at least two electrodes of the capacitor, and a top surface of the transducer. The polymer is able to absorb water and the top surface is arranged such that it is exposed to the environment of the sensor semiconductor device. Furthermore, at least a part of the top surface is superhydrophobic and the sensor semiconductor device is capable of measuring the humidity of the environment of the sensor semiconductor device.

Abstract: The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Abstract: The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Abstract: It is described a magnetic field differential sensor system for measuring rotational movements of a shaft. The described magnetic field sensor system (200) comprises (a) a biasing magnet (210, 510) configured for generating a biasing magnetic field; (b) a magnetic wheel (230) having a wheel axis and a circumferential surface which comprises a regular structure of teeth (231) and gaps (232) arranged in an alternating manner, wherein (i) the magnetic wheel (230) is attachable to the shaft and (ii) the magnetic wheel (230) can be magnetized by the biasing magnetic field; and (c) a magnetic sensor arrangement (220) comprising four magnetic sensor elements (221, 222, 223, 224) being connected with each other in a Wheatstone bridge configuration. Respectively two of the magnetic sensor elements (221, 222, 223, 224) are assigned to one half bridge of the Wheatstone bridge.

Abstract: A method is described for manufacturing a magnetic sensor module (100, 200, 300, 400) having magnetic sensor elements (130, 330, 430) monolithically integrated at a semiconductor chip (110) which comprises an integrated circuit.

Abstract: A magnetic field sensor system for measuring rotational movements of a shaft is disclosed. The sensor system includes a biasing magnet configured for generating a biasing magnetic field and a magnetic wheel having a wheel axis and a circumferential surface which comprises a regular structure of teeth and gaps arranged in an alternating manner. The magnetic wheel is attachable to the shaft and is magnetizable by the biasing magnetic field. A magnetoresistive sensor arrangement comprising four magnetoresistive sensor elements being connected with each other in a Wheatstone bridge, respectively two of the magnetoresistive sensor elements being assigned to one half bridge of the Wheatstone bridge. The four magnetoresistive sensor elements are arranged within an x-y plane.

Abstract: A method is described for manufacturing a magnetic sensor module (100, 200, 300, 400) having magnetic sensor elements (130, 330, 430) monolithically integrated at a semiconductor chip (110) which comprises an integrated circuit.

Abstract: It is described a magnetic field differential sensor system for measuring rotational movements of a shaft. The described magnetic field sensor system (200) comprises (a) a biasing magnet (210, 510) configured for generating a biasing magnetic field; (b) a magnetic wheel (230) having a wheel axis and a circumferential surface which comprises a regular structure of teeth (231) and gaps (232) arranged in an alternating manner, wherein (i) the magnetic wheel (230) is attachable to the shaft and (ii) the magnetic wheel (230) can be magnetized by the biasing magnetic field; and (c) a magnetic sensor arrangement (220) comprising four magnetic sensor elements (221, 222, 223, 224) being connected with each other in a Wheatstone bridge configuration. Respectively two of the magnetic sensor elements (221, 222, 223, 224) are assigned to one half bridge of the Wheatstone bridge.

Abstract: A magnetic field sensor system for measuring rotational movements of a shaft is disclosed. The sensor system includes a biasing magnet configured for generating a biasing magnetic field and a magnetic wheel having a wheel axis and a circumferential surface which comprises a regular structure of teeth and gaps arranged in an alternating manner. The magnetic wheel is attachable to the shaft and is magnetizable by the biasing magnetic field. A magnetoresistive sensor arrangement comprising four magnetoresistive sensor elements being connected with each other in a Wheatstone bridge, respectively two of the magnetoresistive sensor elements being assigned to one half bridge of the Wheatstone bridge. The four magnetoresistive sensor elements are arranged within an x-y plane.

Abstract: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

Abstract: An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.

Abstract: A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed.

Abstract: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

Abstract: A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed.