Abstract: In some embodiments, a method includes positioning a substrate within a processing chamber. The substrate includes a first low-k film having a first water contact angle. The first low-k film is disposed over an interconnect structure. The method further includes cleaning the substrate within the processing chamber to form a cleaned substrate. The cleaned substrate includes a damaged low-k film having a second water contact angle. The method further includes exposing the cleaned substrate to a recovery precursor to form a recovered substrate. The recovered substrate includes a recovered low-k film. The method further includes exposing the recovered substrate to a UV light source to form a treated substrate. The treated substrate includes a treated low-k film having a third water contact angle. The method further includes depositing a liner layer over the treated substrate via atomic layer deposition (ALD).

Abstract: A thermoelectric (TE) ink for TE materials, a TE module using the TE ink, and a method of manufacturing the TE module are provided. The TE ink may include an inorganic binder including chalcogenidometallate (ChaM), and TE particles including Bi2-xSbxTe3-ySey (0?x?2, 0?y?1).