Abstract: A sense amplifying magnetic tunnel (SAMT) device is disclosed. In a particular embodiment, a field effect transistor (FET) having a drain, a source, a channel therebetween, a gate electrode and a tunneling gate oxide proximate to the channel is provided. In addition, a spin valve memory (SVM) cell is provided electrically coupled to the gate electrode. The electrical coupling between the SVM cell and the gate electrode serves to provide a control potential to the gate. In addition, the coupling provides a gain to a current passed through the SAMT device.

Abstract: A magnetic stripline scanner for reading lines of magnetic data on a media including a portable housing having a scanning side. A linear array of magnetic field sensors, such as spin valve magnetic memory cells, is at least partially disposed within the housing, proximate to the scanning side. The magnetic field sensors are capable of detecting external magnetic fields of a threshold intensity. A controller mounted within the housing and coupled to the magnetic field sensors determines the orientation of the sensed magnetic field and thereby infers the binary value represented by the magnetic field. A magnetic stripline scanning system incorporating the scanner with non traditional media such as paper providing lines of magnetic material is also provided. A method of use is also provided.

Abstract: This invention provides a remote sensed pre-amplifier for cross-point arrays. In a particular embodiment, there are a plurality of parallel electrically conductive rows and a plurality of parallel electrically conductive columns crossing the rows, thereby forming a cross-point array with a plurality of intersections. Resistive devices, such as magnetic memory cells, also known as spin valve memory cells, are provided in electrical contact with and located at each intersection. A feedback controlled sense pre-amplifier is also provided to maintain an equi-potential for a given memory cell. A reference voltage is provided to the sense pre-amplifier. As voltage potential, VA?, is provided to the first end of a selected column, contacting a selected memory cell, a feedback voltage VA is provided to the sense pre-amplifier by an independent sense path. The independent sense path connects to the second end of the selected column.

Abstract: This invention provides a soft-reference four conductor magnetic memory storage device. In a particular embodiment, there are a plurality of parallel electrically conductive first sense conductors and a plurality of parallel electrically conductive second sense conductors. The first and second sense conductors may provide a cross point array or a series connected array. Soft-reference magnetic memory cells are provided in electrical contact with and located and at each intersection. In addition there are a plurality of parallel electrically conductive write rows substantially proximate to and electrically isolated from the first sense conductors. A plurality of parallel electrically conductive write columns transverse to the write rows, substantially proximate to and electrically isolated from the second sense conductors, forming a write cross point array with a plurality of intersections, is also provided.

Abstract: The invention includes a memory cell sensor. The memory cell sensor includes an integrator for sensing a logical state of a memory cell. An integrator calibration circuit provides a corrective bias to the integrator, the corrective bias being based upon a difference between an initial integrator output value and a reference value. Another embodiment of the invention includes a method of sensing a logical state of a memory cell. The memory cell being sensed by an integrator. The method includes determining an initial integrator output value when a corrective bias of the integrator is zeroed, generating a correction value by comparing the initial integrator output value to a reference value, and applying the correction value to the corrective bias of the integrator.