Abstract: Analyzing a strain distribution in a semiconductor structure. One embodiment includes a method including: determining a crystallographic orientation of a portion of the semiconductor structure depicted in a diffraction pattern image, identifying a first and a second diffraction spot in the diffraction pattern image, and detecting an anticipated location of each of a plurality of diffraction spots, based on the first and second diffraction spot, and the determining of the crystallographic orientation. The method includes forming perimeter tiles around the first and the second diffraction spot, and the anticipated location of each of the plurality of diffraction spots, and storing each of the formed perimeter tiles of the diffraction pattern image. Finally the method includes determining the strain distribution in the semiconductor structure based on an actual location of the first and the second diffraction spot, and each of the plurality of diffraction spots within the perimeter tile.

Abstract: A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.

Abstract: A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.

Abstract: Analyzing a strain distribution in a semiconductor structure. One embodiment includes a method including: determining a crystallographic orientation of a portion of the semiconductor structure depicted in a diffraction pattern image, identifying a first and a second diffraction spot in the diffraction pattern image, and detecting an anticipated location of each of a plurality of diffraction spots, based on the first and second diffraction spot, and the determining of the crystallographic orientation. The method includes forming perimeter tiles around the first and the second diffraction spot, and the anticipated location of each of the plurality of diffraction spots, and storing each of the formed perimeter tiles of the diffraction pattern image. Finally the method includes determining the strain distribution in the semiconductor structure based on an actual location of the first and the second diffraction spot, and each of the plurality of diffraction spots within the perimeter tile.

Abstract: A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.

Abstract: A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.

Abstract: An optical device has at least one waveguide with at least one adjacent resonator, where the distance between the resonator and the waveguide can be controllably adjusted to change the optical coupling between the resonator and the waveguide. When implemented as part of an interferometer, the ability to adjust the waveguide/resonator distance—and thereby the optical coupling between them—provides a mechanically tunable interferometer.

Abstract: A MEMS optical switch includes a movable cantilevered beam with a waveguide corresponding to one port of the switch. The beam is designed for in-plane motion and can be deflected, e.g., using a three-electrode motion actuator having one electrode on each side of the beam, which itself acts as the third electrode. The beam moves toward a side electrode in response to a voltage difference applied between the beam and that electrode. The beam has two terminal positions, each defined by a stopper. At each terminal position, a bumper portion of the beam is pushed against a corresponding stopper, which aligns the waveguide in the beam with one of two stationary waveguides, each corresponding to a port of the switch. The MEMS switch may be fabricated using a single silicon-on-insulator (SOI) wafer.

Abstract: A MEMS optical switch includes a movable cantilevered beam with a waveguide corresponding to one port of the switch. The beam is designed for in-plane motion and can be deflected, e.g., using a three-electrode motion actuator having one electrode on each side of the beam, which itself acts as the third electrode. The beam moves toward a side electrode in response to a voltage difference applied between the beam and that electrode. The beam has two terminal positions, each defined by a stopper. At each terminal position, a bumper portion of the beam is pushed against a corresponding stopper, which aligns the waveguide in the beam with one of two stationary waveguides, each corresponding to a port of the switch. The MEMS switch may be fabricated using a single silicon-on-insulator (SOI) wafer.