Abstract: A transparent device for protection from an action of shock, projectiles, fragments or shock waves is provided. The device is a laminate having brittle-fracture, transparent materials that are joined together by way of transparent intermediate layers of organic polymers. The laminate is closed on the protective side facing away from the side of action by a fragment-protective layer that is formed as a transparent polymer layer in a thickness of 0.5 mm to 12 mm. The laminate has facing the side of action a chemically prestressed, brittle-fracture panel that is at a distance of 3 mm to 20 mm from the side of action.

Abstract: A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm?3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

Abstract: A transparent device for protection from an action of shock, projectiles, fragments or shock waves is provided. The device is a laminate having brittle-fracture, transparent materials that are joined together by way of transparent intermediate layers of organic polymers. The laminate is closed on the protective side facing away from the side of action by a fragment-protective layer that is formed as a transparent polymer layer in a thickness of 0.5 mm to 12 mm. The laminate has facing the side of action a chemically prestressed, brittle-fracture panel that is at a distance of 3 mm to 20 mm from the side of action.

Abstract: A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm?3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

Abstract: A large-volume scintillation crystal affording a high scintillation yield and having high mechanical strength is obtained by growing a crystal from a melt containing strontium iodide, barium iodide or a mixture thereof and by doping with an activator. To this end, the melt is enclosed in a closed volume. Before and/or during the growing, the melt is in diffusion-permitting connection, via the enclosed volume, with an oxygen getter which sets a constant oxygen potential in the closed volume and the melt. Such a scintillation crystal is suitable for detecting UV-, gamma-, beta-, alpha- and/or positron radiation.

Abstract: A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm?3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.