Abstract: For the targeted influencing of the internal pressure within a cavity between two elements of a component, a getter material or an outgassing material is situated in an additional cavity between the two elements. After the two elements are bonded to one another, the additional cavity is still to be joined via a connecting opening to the cavity. The getter material or the outgassing material is then activated so that gasses are bound in the additional cavity and in the connected cavity, or an outgassing takes place. Only when the sought internal pressure has established itself in the connected cavity is the connecting opening to the additional cavity closed. In this way, the getter material or the outgassing material is only used for establishing a defined internal pressure, but no longer has any influence on the internal pressure within the cavity during ongoing operation of the component.

Abstract: A particle sensor for detecting electrically conductive particles. The particle sensor includes a first electrode structure with at least one electrode and a second electrode structure with at least one electrode. The first electrode structure and the second electrode structure are situated on an electrically insulating base body. An electric potential difference is generatable between an electrode of the first electrode structure and an electrode of the second electrode structure. The base body includes a heating structure for heating the first electrode structure and the second electrode structure, the heating structure being at least partially enclosed by the base body. This makes it possible to protect the heating structure and also to reduce the voltage needed to burn off particles accumulated on the electrode structures. A method for manufacturing a particle sensor is also described.

Abstract: A micromechanical spring for an inertial sensor, including segments of a monocrystalline base material, the segments having surfaces which are situated at a right angle to one another with respect to a plane of oscillation of the spring and normal to the plane of oscillation of the spring, the segments being manufactured in a crystal-direction-dependent etching process and each having two different orientations normal to the plane of oscillation, in which the spring includes a defined number of segments situated in a defined manner.

Abstract: A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

Abstract: A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer.

Abstract: Method for on-chip stress decoupling to reduce stresses in a vertical hybrid integrated component including MEMS and ASIC elements and to mechanical decoupling of the MEMS structure. The MEMS/ASIC elements are mounted above each other via at least one connection layer and form a chip stack. On the assembly side, at least one connection area is formed for the second level assembly and for external electrical contacting of the component on a component support. At least one flexible stress decoupling structure is formed in one element surface between the assembly side and the MEMS layered structure including the stress-sensitive MEMS structure, in at least one connection area to the adjacent element component of the chip stack or to the component support, the stress decoupling structure being configured so that the connection material does not penetrate into the stress decoupling structure and flexibility of the stress decoupling structure is ensured.

Abstract: For the targeted influencing of the internal pressure within a cavity between two elements of a component, a getter material or an outgassing material is situated in an additional cavity between the two elements. After the two elements are bonded to one another, the additional cavity is still to be joined via a connecting opening to the cavity. The getter material or the outgassing material is then activated so that gasses are bound in the additional cavity and in the connected cavity, or an outgassing takes place. Only when the sought internal pressure has established itself in the connected cavity is the connecting opening to the additional cavity closed. In this way, the getter material or the outgassing material is only used for establishing a defined internal pressure, but no longer has any influence on the internal pressure within the cavity during ongoing operation of the component.

Abstract: A method for producing a multi-layer electrode system includes providing a carrier substrate having a recess in a top side of the carrier substrate. At least one wall of the recess is inclined in relation to a bottom side of the carrier substrate, which is opposite to the top side. The method also includes applying a multi-layer stack, which includes at least a first electrode layer, a second electrode layer, and a piezoelectric layer arranged between the first electrode layer and the second electrode layer, to the top side of the carrier substrate. At least the wall and a bottom of the recess are covered by at least a portion of the multi-layer stack.

Abstract: A micromechanical structure includes a substrate having an upper side and a lower side, the substrate having a first region and a second region adjacent thereto, the upper side being fashioned in the first region as a mirror region that reflects light. In the second region on the upper side of the substrate, a network-type structure and/or a web-type structure is fashioned, such that the second region is essentially non-light-reflective.

Abstract: A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer.