Patents by Inventor Fritz G. Kirscht
Fritz G. Kirscht has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200407874Abstract: The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.Type: ApplicationFiled: September 11, 2020Publication date: December 31, 2020Inventors: Alain Turenne, Dan Smith, Damon Dastgiri, Fritz G. Kirscht, Anthony Tummillo, Chunhui Zhang, Kamel Ounadjela
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Publication number: 20180327928Abstract: The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.Type: ApplicationFiled: July 11, 2018Publication date: November 15, 2018Inventors: Alain Turenne, Dan Smith, Damon Dastgiri, Fritz G. Kirscht, Anthony Tummillo, Chunhui Zhang, Kamel Ounadjela
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Publication number: 20150243569Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.Type: ApplicationFiled: February 27, 2015Publication date: August 27, 2015Inventors: Fritz G. Kirscht, Marcin Walerysiak, Matthias Heuer, Anis Jouini, Kamel Ounadjela
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Publication number: 20150040821Abstract: The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.Type: ApplicationFiled: January 25, 2013Publication date: February 12, 2015Applicant: Silicor Materials Inc.Inventors: Alain Turenne, Dan Smith, Damon Dastgiri, Fritz G. Kirscht, Anthony Tummillo, Chunhui Zhang, Kamel Ounadjela
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Publication number: 20150020729Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: ApplicationFiled: June 23, 2014Publication date: January 22, 2015Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Patent number: 8758507Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: GrantFiled: November 24, 2010Date of Patent: June 24, 2014Assignee: Silicor Materials Inc.Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Publication number: 20130291939Abstract: The present invention relates to photovoltaic devices such as silicon solar cells. Devices shown exhibit improved low light performance and increased breakdown strength. Reasons for such improvements includes emitter concentration profiles leading to significantly reduced leakage currents.Type: ApplicationFiled: May 7, 2013Publication date: November 7, 2013Inventors: Martin Kaes, Gunnar Stiller, Jean Patrice Rakotoniaina, Fritz G. Kirscht, Olivier Laparra, Kamel Ounadjela
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Patent number: 8404970Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. The back surface includes a doped region, the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.Type: GrantFiled: June 15, 2009Date of Patent: March 26, 2013Assignee: Silicor Materials Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Patent number: 8316745Abstract: Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered.Type: GrantFiled: August 26, 2011Date of Patent: November 27, 2012Assignee: Calisolar Inc.Inventors: Fritz G. Kirscht, Kamel Ounadjela, Jean Patrice Rakotoniaina, Dieter Linke
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Patent number: 8298850Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.Type: GrantFiled: June 15, 2009Date of Patent: October 30, 2012Assignee: Silicor Materials Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Publication number: 20110126758Abstract: Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.Type: ApplicationFiled: November 24, 2010Publication date: June 2, 2011Applicant: Calisolar, Inc.Inventors: Fritz G. Kirscht, Matthias Heuer, Martin Kaes, Kamel Ounadjela
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Publication number: 20100275983Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. After removing the PSG, assuming phosphorous diffusion, and isolating the front junction, dielectric layers are deposited on the front and back surfaces. Contact grids are formed, for example by screen printing. Prior to depositing the back surface dielectric, a metal grid may be applied to the back surface, the back surface contact grid registered to, and alloyed to, the metal grid during contact firing.Type: ApplicationFiled: June 15, 2009Publication date: November 4, 2010Applicant: Calisolar, Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Publication number: 20100275984Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. The back surface includes a doped region, the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.Type: ApplicationFiled: June 15, 2009Publication date: November 4, 2010Applicant: Calisolar, Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Publication number: 20100275995Abstract: A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes a back surface contact grid and an overlaid blanket metal reflector. A doped amorphous silicon layer is interposed between the contact grid and the blanket layer.Type: ApplicationFiled: June 15, 2009Publication date: November 4, 2010Applicant: Calisolar, Inc.Inventors: Martin Kaes, Peter Borden, Kamel Ounadjela, Andreas Kraenzl, Alain Blosse, Fritz G. Kirscht
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Publication number: 20030116083Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.Type: ApplicationFiled: November 27, 2002Publication date: June 26, 2003Applicant: SUMCO Oregon corporationInventors: Fritz G. Kirscht, Peter D. Wildes, Volker R. Todt, Nobuo Fukuto, Boris A. Snegirev, Seung-Bae Kim
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Patent number: 6491752Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.Type: GrantFiled: July 16, 1999Date of Patent: December 10, 2002Assignee: SUMCO Oregon CorporationInventors: Fritz G. Kirscht, Peter D. Wildes, Volker R. Todt, Nobuo Fukuto, Boris A. Snegirev, Seung-Bae Kim