Patents by Inventor Fritz Redecker

Fritz Redecker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS OF FABRICATING ELECTRONIC DEVICES USING DIRECT COPPER PLATING
    Publication number: 20120056325
    Abstract: The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention.
    Type: Application
    Filed: November 10, 2011
    Publication date: March 8, 2012
    Inventors: Hyungsuk Alexander YOON, Fritz Redecker
  • Methods of fabricating electronic devices using direct copper plating
    Patent number: 8058164
    Abstract: The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention.
    Type: Grant
    Filed: June 4, 2007
    Date of Patent: November 15, 2011
    Assignee: Lam Research Corporation
    Inventors: Hyungsuk Alexander Yoon, Fritz Redecker
  • Methods of fabricating electronic devices using direct copper plating
    Publication number: 20080299772
    Abstract: The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention.
    Type: Application
    Filed: June 4, 2007
    Publication date: December 4, 2008
    Inventors: Hyungsuk Alexander Yoon, Fritz Redecker