Patents by Inventor Fu-Bang CHEN

Fu-Bang CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140070247
    Abstract: A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.
    Type: Application
    Filed: January 7, 2013
    Publication date: March 13, 2014
    Applicant: HIGH POWER OPTO. INC.
    Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
  • Publication number: 20140061695
    Abstract: A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer. Accordingly, the metal mirror layer can be protected by the protection layer to prevent from oxidation in subsequent processes and to prevent metal deterioration during high-current operations. Thus the metal mirror layer can maintain high reflectivity, thereby increasing light extraction efficiency and electrical stability of the LED.
    Type: Application
    Filed: August 31, 2012
    Publication date: March 6, 2014
    Inventors: WEI-YU YEN, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
  • Patent number: 8659029
    Abstract: A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: February 25, 2014
    Assignee: Lextar Electronics Corporation
    Inventors: Te-Chung Wang, Fu-Bang Chen, Hsiu-Mu Tang
  • Publication number: 20130328098
    Abstract: A buffer layer structure for an LED is provided. The LED includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer is a composite material, and includes at least one first material and at least one second material that are alternately stacked. The first material and the second material are mutually diffused to generate gradient variation after the buffer layer is processed by a thermal treatment. Thus, an interface effect and thermal stress between difference interfaces are eliminated, and a channel for ion diffusion is blocked for enhancing light-emitting efficiency of the LED.
    Type: Application
    Filed: August 13, 2013
    Publication date: December 12, 2013
    Applicant: HIGH POWER OPTO. INC.
    Inventors: Li-Ping Chou, WEI-YU YEN, Fu-Bang Chen, Chih-Sung Chang
  • Publication number: 20130313605
    Abstract: A light-emitting diode (LED) electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. Through flat interfaces provided by the contact platforms, voids are not generated when the N-type electrodes are formed on the contact platforms. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.
    Type: Application
    Filed: May 23, 2012
    Publication date: November 28, 2013
    Inventors: Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
  • Publication number: 20130313598
    Abstract: An LED electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. The contact platforms have roughness between 0.01 ?m and 0.1 ?m, such that not only voids are not generated but also good adhesion is provided to prevent carrier confinement and disengagement. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.
    Type: Application
    Filed: July 23, 2013
    Publication date: November 28, 2013
    Applicant: HIGH POWER OPTO. INC.
    Inventors: Li-Ping CHOU, Fu-Bang CHEN, Chih-Sung CHANG
  • Publication number: 20130307008
    Abstract: A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
    Type: Application
    Filed: July 10, 2013
    Publication date: November 21, 2013
    Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
  • Publication number: 20130307009
    Abstract: A reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
    Type: Application
    Filed: July 10, 2013
    Publication date: November 21, 2013
    Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
  • Publication number: 20130307012
    Abstract: A tension release layer structure is applied to an LED which includes a P-type electrode, a permanent substrate, a binding layer, a tension release layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. The tension release layer is made of a complex material including at least two material elements with boundaries that are blended with each other. As the complex material in the tension release layer does not have apparent interface separation, stress between interface effect and materials can be eliminated to increase light-emitting efficiency and production yield of the LED.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 21, 2013
    Inventors: Li-Ping Chou, Wei-Yu Yen, Fu-Bang Chen, Chih-Sung Chang
  • Publication number: 20130292734
    Abstract: An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 7, 2013
    Inventors: Wei-chun TSENG, Wei-Yu Yen, Fu-Bang Chen, Chih-Sung Chang
  • Patent number: 8552457
    Abstract: A thermal stress releasing structure is applied to a light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer includes a plurality of first material layers and a plurality of second material layers. The first material layers and the second material layers are alternately stacked in a staggered manner to form a concave-convex structure in a stacking direction of the first and second material layers. The concave-convex structure is formed in a corrugated shape to function as the thermal stress releasing structure, thus is capable of releasing thermal stress generated by thermal expansion and contraction of the buffer layer in the LED to prevent the buffer layer from damaging a metal layer or an epitaxy layer.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: October 8, 2013
    Assignee: High Power Opto. Inc.
    Inventors: Wei-Yu Yen, Fu-Bang Chen, Chih-Sung Chang
  • Patent number: 8546831
    Abstract: A reflection convex mirror structure is applied to a vertical light-emitting diode (LED) which comprises a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer, a filler and a mirror are disposed right below the N-type electrode. The filler is made of a transparent material and has a convex surface facing the light-emitting layer. The mirror is formed on the convex surface of the filler. By utilizing the filler and the mirror to form the reflection convex mirror structure, excited light is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: October 1, 2013
    Assignee: High Power Opto Inc.
    Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
  • Publication number: 20130161669
    Abstract: An LED with a current diffusion structure comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode and a current blocking layer. The N-type semiconductor layer, light emitting layer and P-type semiconductor layer form a sandwich structure. The N-type and P-type electrodes are respectively arranged on the N-type and P-type semiconductor layers. The current blocking layer has the pattern of the N-type electrode and is embedded inside the N-type semiconductor layer. Thereby not only current generated by the N-type electrode detours the current blocking layer and uniformly passes through the light emitting layer, but also prevents interface effect to increase impedance. Thus is promoted lighting efficiency of LED. Further, as main light-emitting regions of the light emitting layer are far from the N-type electrode, light shielded by the N-type electrode is reduced and illumination of LED is thus enhanced.
    Type: Application
    Filed: December 23, 2011
    Publication date: June 27, 2013
    Inventors: Fu-Bang Chen, Wei-Yu Yen, Chih-Sung Chang
  • Publication number: 20130130420
    Abstract: A laser lift-off method for LEDs forms an elevation difference structure on a conversion substrate corresponding to one isolation zone of an epitaxial layer before epitaxy is formed on the conversion substrate to form the epitaxial layer. The elevation difference structure can release stress between the material interfaces, thus can reduce broken probability while lifting off the conversion substrate and epitaxial layer via laser and further improve production yield.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 23, 2013
    Inventors: Fu-Bang CHEN, Ruei-Sian Zeng, Chih-Sung Chang
  • Publication number: 20120241752
    Abstract: A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.
    Type: Application
    Filed: November 21, 2011
    Publication date: September 27, 2012
    Inventors: Te-Chung Wang, Fu-Bang Chen, Hsiu-Mu Tang
  • Publication number: 20110210343
    Abstract: A semiconductor wafer includes a substrate, a first separating structure and a semiconductor stacked layer structure. The substrate has a first surface. The first separating structure is formed on the first surface to divide the first surface into a plurality of independent regions. The minimum area of each of the regions is more than or equal to one square inch. The semiconductor stacked layer structure is disposed on the first surface and the first separating structure. The semiconductor wafer can prevent bowing of the semiconductor wafer during an epitaxial growth process so as to enhance quality of the semiconductor wafer.
    Type: Application
    Filed: August 20, 2010
    Publication date: September 1, 2011
    Applicant: Lextar Electronics Corporation
    Inventors: Fu-Bang CHEN, Kuo-Lung Fang, Kun-Fu Huang, Te-Chung Wang
  • Patent number: D686173
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: July 16, 2013
    Assignee: High Power Opto, Inc.
    Inventors: Yi-Chun Chou, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang