Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: An electrolytic cell includes a cation exchange membrane, a cathode compartment, and an anode compartment. The cathode compartment includes a gas diffusion electrode and a flow channel element, in which the flow channel element is between the cation exchange membrane and the gas diffusion electrode, and has a plurality of flow channels arranged in parallel with each other. The anode compartment includes an anode mesh, in which the cation exchange membrane is between the anode mesh and the flow channel element. A distance between the anode mesh and the gas diffusion electrode is substantially equal to the sum of a first thickness of the cation exchange membrane and a second thickness of the flow channel element. The novel electrolytic cell can combine with a chloralkali electrolytic cell to deal with gaseous CO2 and produce products, e.g., synthesis gas, for other purposes.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a substrate, semiconductor structures, an isolation layer, an adhesive layer, a metal layer, a metal nitride layer, a semiconductor layer, a profile modifier layer, and a disconnection structure. The semiconductor structures are disposed on the substrate. The isolation layer is disposed between the semiconductor structures. The metal layer is disposed on an adhesive layer. The metal nitride layer is disposed on the metal layer. The semiconductor layer is disposed on the metal nitride layer. The profile modifier layer is disposed on the semiconductor layer. The disconnection structure is disposed and extending from the profile modifier layer to the isolation layer. A first width of the disconnection structure in the profile modifier layer is substantially the same as a second width of the disconnection structure in the isolation layer.

Abstract: A projected capacitive touch panel and fabrication method thereof is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the first plane of the substrate, wherein the conductive layer has a first pattern and a second pattern; and (c) forming a conductive bridge on the conductive layer to electrically connect the first pattern with the second pattern.

Abstract: A fabrication method of a projective-capacitive touch panel is provided. The method includes steps of: providing a substrate; forming a metal trace layer on the substrate with a first exposing/developing process and a etching/stripping process sequentially; forming a first pattern layer on the metal trace layer with a second exposing/developing process, a first filming process and a first stripping process sequentially; forming a insulation layer on the first pattern layer; and forming a second pattern layer on the insulation layer with a third exposing/developing process, a second filming process and a second stripping process sequentially.