Abstract: A cable has two distal ends each provided with a fixing member. The cable includes a cable body and a coating layer. The cable body has two distal ends each protruding outward from the coating layer. The fixing member has an inside formed with a first urging hole and a second urging hole. The first urging hole is not communicated with the second urging hole. Thus, the fixing member is formed with two independent urging holes to closely press and clamp the coating layer and the cable body of the cable respectively, thereby enhancing the tensile strength of the cable.

Abstract: Disclosed is a dual damascene process for a semiconductor device with two low dielectric constant layers in a stack thereof, in which a via hole and a trench connecting with the via hole are formed respectively in the dielectric layers and a conductor is filled in the via hole and the trench to connect with a conductive region below the via hole after a barrier layer between the via hole and the conductive region is removed. A liner is deposited on the sidewalls of the dielectric layers in the via hole and the trench before the removal of the barrier layer to prevent particles of the conductive region such as copper from sputtering up to the dielectric layers when removing the barrier layer. An etch-stop layer inserted between the dielectric layers is pulled back to be spaced from the via hole with a distance to improve the trench-to-via alignment.

Abstract: An alignment mark for increasing the accuracy of an alignment includes a cross pattern, two horizontal line patterns having serrated shape. The cross pattern is typically formed over a scribe line for alignment in semiconductor process. The cross pattern includes a vertical line and a horizontal line. The vertical line is vertical to the scribe line while the horizontal line is parallel to the scribe line. The horizontal patterns which are parallel to the scribe line are respectively connected to one end of the vertical line. The horizontal patterns have serrated patterns which are used to change the shape of a noise signal. The high of the serrated shape pattern is about 3 micro meters while the width of the serrated shape pattern is about 3 micro meters.