Patents by Inventor Fu-Cheng Yen

Fu-Cheng Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating semiconductor device
    Patent number: 10236179
    Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: March 19, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Fu-Cheng Yen, Tsung-Mu Yang, Sheng-Hsu Liu, Tsang-Hsuan Wang, Chun-Liang Kuo, Yu-Ming Hsu, Chung-Min Tsai, Yi-Wei Chen
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
    Publication number: 20180097110
    Abstract: A method for manufacturing a semiconductor structure comprises the following steps. First, a recess is formed in a substrate. At least one wet cleaning process is performed to the recess and the substrate. Then, a baking process is performed to the recess and the substrate in an atmosphere containing H2 gas. After the baking process, a dry cleaning process is performed the recess and the substrate.
    Type: Application
    Filed: September 30, 2016
    Publication date: April 5, 2018
    Inventors: Tsung-Mu Yang, Kuang-Hsiu Chen, Chun-Liang Kuo, Tsang-Hsuan Wang, Yu-Ming Hsu, Fu-Cheng Yen, Chung-Min Tsai
  • METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    Publication number: 20170301536
    Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.
    Type: Application
    Filed: April 14, 2016
    Publication date: October 19, 2017
    Inventors: Fu-Cheng Yen, Tsung-Mu Yang, Sheng-Hsu Liu, Tsang-Hsuan Wang, Chun-Liang Kuo, Yu-Ming Hsu, Chung-Min Tsai, Yi-Wei Chen
  • Suitcase or similar article
    Patent number: D285626
    Type: Grant
    Filed: January 10, 1984
    Date of Patent: September 16, 1986
    Inventor: Fu-Cheng Yen