Abstract: Systems and methods are disclosed herein that relate to frequency domain resource allocation for interlaced transmission. Embodiments of a method performed by a wireless device are disclosed. In one embodiment, a method performed by a wireless device comprises receiving a reserved resource indicator that indicates an uplink reserved resource pattern. The uplink reserved resource pattern defines at least which subset of uplink Physical Resource Blocks (PRBs) from among a set of allocated uplink PRBs are not available for uplink transmission. In this manner, a low overhead, flexible frequency domain resource allocation scheme for partial interlace transmission is provided.

Abstract: According to some embodiments, a method in a wireless device comprises: receiving a control channel (e.g., physical downlink control channel (PDCCH)) that includes control information that indicates a set of time and frequency resources allocated for the wireless device to receive a data transmission; determining that the set of time and frequency resources allocated for data transmission overlaps with a control resource region (e.g., control resource set (CORESET)); and receiving the data transmission in the set of time and frequency resources allocated for data transmission. The control information may include a bitmap that indicates at one or more groups of time and frequency resources excluded/included for the data transmission region.

Abstract: A portable electronic device and a plate antenna module thereof are provided. The plate antenna module includes an antenna carrying structure, an inner surrounding radiation structure, a first inner feeding structure, an outer surrounding radiation structure, and a first outer feeding structure. The first inner feeding structure is surrounded by the inner surrounding radiation structure. The inner surrounding radiation structure is surrounded by the outer surrounding radiation structure and separate from the outer surrounding radiation structure. The first outer feeding structure corresponds to the first inner feeding structure.

Abstract: Some embodiments advantageously provide methods, wireless devices and network nodes for unscheduled uplink access on an unlicensed cell. According to one aspect, an exemplary process includes a wireless device for autonomously transmitting uplink control information, UCI, together with autonomous uplink, UL, data transmission. The process includes mapping the UCI to time-frequency resources of the PUSCH and transmitting the PUSCH with the UCI to a base station without a dynamic uplink grant from the base station.

Abstract: According to certain embodiments, a method performed by a wireless device comprises determining a subset of a set of control channel elements (CCEs) to monitor within one or more frequency domain monitoring occasions. The subset of CCEs excludes any CCEs of the set of CCEs that partially or fully overlap one or more guard physical resource blocks (PRBs). The method comprises monitoring the determined subset of CCEs for one or more control channel candidates within the frequency domain monitoring occasion(s).

Abstract: A method in a communication device for managing uplink transmissions from the communication device to a network node. The method includes obtaining a timing advance value, the timing advance value indicating a time period in which the communication device shall advance a first uplink subframe transmission to the network node, obtaining information about a location of a gap within the first uplink subframe, the gap having a predefined duration, the location of the gap occurring after the time period indicated in the timing advance value, and performing the first uplink subframe transmission after the predefined duration.

Abstract: Semiconductor device includes substrate having fins, first S/D feature comprising first epitaxial layer contacting first fin, second epitaxial layer on first epitaxial layer, third epitaxial layer on second epitaxial layer, third epitaxial layer comprising center and edge portion higher than center portion, and fourth epitaxial layer on third epitaxial layer, second S/D feature adjacent first S/D feature and comprising first epitaxial layer contacting second fin, second epitaxial layer on first epitaxial layer of second S/D feature, third epitaxial layer on second epitaxial layer of second S/D feature, third epitaxial layer comprising center and edge portion higher than center portion of third epitaxial layer, center and edge portions of third epitaxial layer of first and second S/D features are merging, and fourth epitaxial layer on third epitaxial layer of second S/D feature, S/D contact covering edge and center portions of third epitaxial layers of first and second S/D features.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes channel members vertically stacked over a substrate, a gate structure engaging the channel members, a gate spacer layer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, an inner spacer layer interposing the gate structure and the epitaxial feature, and a semiconductor layer interposing the inner spacer layer and the epitaxial feature.

Abstract: Abstract: According to certain embodiments, a method performed by a wireless device comprises monitoring a first search space set for a control channel candidate, receiving an indication to switch the search space set from a network node, and switching the search space set based on receiving the indication to switch the search space set. Switching the search space set comprises stopping the monitoring of the first search space set and starting monitoring a second search space set for the control channel candidate.

Abstract: A wireless device receives downlink control information (DCI) from a network node, determines a physical downlink shared channel (PDSCH) group based on information in the received DCI, and transmits a hybrid automatic repeat request acknowledgement (HARQ-ACK) report to the network node based on the determined PDSCH group.

Abstract: The present disclosure described systems and methods for providing OTT services to a UE. An exemplary OTT-providing host computer includes a transceiver, a processor, and memory collective configured to provide the OTT service by initiating transmission of user data to the UE. To transmit the user data from the host computer to the wireless device, a network node sends a first control message for assigning a PDSCH, the first control message comprising a first MCS indication as described. The network node sends to the wireless device a second control message for assigning a PDSCH, the second control message comprising a second MCS indication as described. The network node transmits the user data thereafter.

Abstract: Embodiments herein relate to a method performed by a first communication node operating in a wireless communications network. The first communication node adjusts a value of a Contention Window, CW, from a first value to a second value, the second value being a higher value than the first value, wherein adjusting the value is based on: one or more feedback timers having expired at a time of performing a sensing procedure in the absence of: a) a received uplink, UL, grant from a second communication node, or b) a downlink feedback from the second communication node for an Autonomous Uplink, AUL, transmission from the first communication node. Following adjusting the value, the first communication node initiates a sensing procedure performed prior to a transmission of an UL burst to the second communication node, wherein the sensing procedure uses the adjusted value of the CW.

Abstract: Photosensors may be formed on a front side of a semiconductor substrate. An optical refraction layer having a first refractive index may be formed on a backside of the semiconductor substrate. A grid structure including openings is formed over the optical refraction layer. A masking material layer is formed over the grid structure and the optical refraction layer. The masking material layer may be anisotropically etched using an anisotropic etch process that collaterally etches a material of the optical refraction layer and forms non-planar distal surface portions including random protrusions on physically exposed portions of the optical refraction layer. An optically transparent layer having a second refractive index that is different from the first refractive index may be formed on the non-planar distal surface portions of the optical refraction layer. A refractive interface refracts incident light in random directions, and improves quantum efficiency of the photo sensors.

Abstract: The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked; forming a sacrificial gate structure over the fin structure; etching a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, thereby forming a source/drain trench; laterally etching the first semiconductor layers through the source/drain trench; forming an inner spacer layer, in the source/drain trench, at least on lateral ends of the etched first semiconductor layers; forming a seeding layer on the inner spacer layer; and growing a source/drain epitaxial layer in the source/drain trench, wherein the growing of the source/drain epitaxial layer includes growing the source/drain epitaxial layer from the seeding layer.

Abstract: According to certain embodiments, a method is disclosed for operating a user equipment. The method comprises transmitting or receiving a transmission on at least one of the component carriers, wherein the at least one component carrier is associated with a slot duration that corresponds to a numerology of the component carrier. The transmitting or receiving on the at least one of the component carriers is based on a relation between a number of information bits on the at least one of the component carriers over one or more reference slot durations and a reference data rate.

Abstract: A device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate and laterally separated from the first semiconductor channel. A gate structure covers and wraps around the first semiconductor channel and the second semiconductor channel. A first source/drain region abuts the first semiconductor channel on a first side of the gate structure, and a second source/drain region abuts the second semiconductor channel on the first side of the gate structure. An isolation structure is under and between the first source/drain region and the second source/drain region, and includes a first isolation region in contact with bottom surfaces of the first and second source/drain regions, and a second isolation region in contact with sidewalls of the first and second source/drain regions, and extending from a bottom surface of the first isolation region to upper surfaces of the first and second source/drain regions.

Abstract: Semiconductor device includes substrate having fins, first S/D feature comprising first epitaxial layer contacting first fin, second epitaxial layer on first epitaxial layer, third epitaxial layer on second epitaxial layer, third epitaxial layer comprising center and edge portion higher than center portion, and fourth epitaxial layer on third epitaxial layer, second S/D feature adjacent first S/D feature and comprising first epitaxial layer contacting second fin, second epitaxial layer on first epitaxial layer of second S/D feature, third epitaxial layer on second epitaxial layer of second S/D feature, third epitaxial layer comprising center and edge portion higher than center portion of third epitaxial layer, center and edge portions of third epitaxial layer of first and second S/D features are merging, and fourth epitaxial layer on third epitaxial layer of second S/D feature, S/D contact covering edge and center portions of third epitaxial layers of first and second S/D features.

Abstract: Method and apparatus of a terminal device and a base station for scheduled uplink transmission are provided in this disclosure. In a terminal device, an uplink grant from a base station is detected providing permission of data transmission from the terminal device. A coordination indicator identifying a resource coordination zone is transmitted to the base station along with the data. Then, controlling messages are sent from the terminal device for a further uplink grant to be issued from the base station, based on monitoring the resource coordination zone. Problem arising from channel interference can be resolved through the provided methods.

Abstract: A gate driving circuit includes a bootstrapping circuit, a pre-charge circuit, and an output control circuit. The bootstrapping circuit is composed of a bootstrapping capacitor and a transistor. A first terminal of the bootstrapping capacitor has a first voltage during a first duration. The pre-charge circuit is connected to the first terminal of the bootstrapping capacitor. The pre-charge circuit boosts the first terminal of the bootstrapping capacitor from the first voltage to a second voltage during a second duration. The bootstrapping circuit boosts the first terminal of the bootstrapping capacitor from the second voltage to a third voltage during a third duration. The output control circuit is connected to the first terminal of the bootstrapping capacitor. The output control circuit boosts the first terminal of the bootstrapping capacitor from the third voltage to a fourth voltage during a fourth duration.

Abstract: A semiconductor device includes a substrate, a plurality of nanowires, a gate structure, a source/drain epitaxy structure, and a semiconductor layer. The substrate has a protrusion portion. The nanowires extend in a first direction above the protrusion portion of the substrate, the nanowires being arranged in a second direction substantially perpendicular to the first direction. The gate structure wraps around each of the nanowires. The source/drain epitaxy structure is in contact with an end surface of each of the nanowires, in which a bottom surface of the source/drain epitaxy structure is lower than a top surface of the protrusion portion of the substrate. The semiconductor layer is in contact with the bottom surface of the epitaxy structure, in which the semiconductor layer is spaced from the protrusion portion of the substrate.