Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A method for thinning a wafer is provided. In one embodiment, a wafer is provided having a plurality of semiconductor chips, the wafer having a first side and a second side opposite the first side, wherein each of the chips includes a set of through silicon vias (TSVs), each of the TSVs substantially sealed by a liner layer and a barrier layer. A wafer carrier is provided for attaching to the second side of the wafer. The first side of the wafer is thinned and thereafer recessed to partially expose portions of the liner layers, barrier layers and the TSVs protruding from the wafer. An isolation layer is deposited over the first side of the wafer and the top portions of the liner layers, barrier layers and the TSVs. Thereafter, an insulation layer is deposited over the isolation layer. The insulation layer is then planarized to expose top portions of the TSVs. A dielectric layer is deposited over the planarized first side of the wafer.

Abstract: A method for thinning a wafer is provided. In one embodiment, a wafer is provided having a plurality of semiconductor chips, the wafer having a first side and a second side opposite the first side, wherein each of the chips includes a set of through silicon vias (TSVs), each of the TSVs substantially sealed by a liner layer and a barrier layer. A wafer carrier is provided for attaching to the second side of the wafer. The first side of the wafer is thinned and thereafer recessed to partially expose portions of the liner layers, barrier layers and the TSVs protruding from the wafer. An isolation layer is deposited over the first side of the wafer and the top portions of the liner layers, barrier layers and the TSVs. Thereafter, an insulation layer is deposited over the isolation layer. The insulation layer is then planarized to expose top portions of the TSVs. A dielectric layer is deposited over the planarized first side of the wafer.

Abstract: An ILD dielectric layer stack and method for forming the same, the method includes a semiconductor substrate including CMOS transistors with gate electrode portions; depositing a first layer including phosphorous doped SiO2 over the semiconductor substrate to a thickness sufficient to cover the gate electrode portions including intervening gaps; depositing a second layer of undoped SiO2 over and contacting the first layer to a thickness sufficient to leave a second layer thickness portion overlying the first layer following a subsequent oxide chemical mechanical polish (CMP) planarization process; carrying out the oxide CMP process to planarize the second layer and leave the second layer thickness portion; and forming metal filled local interconnects extending through a thickness portion of the first and second layers.

Abstract: An ILD dielectric layer stack and method for forming the same, the method includes a semiconductor substrate including CMOS transistors with gate electrode portions; depositing a first layer including phosphorous doped SiO2 over the semiconductor substrate to a thickness sufficient to cover the gate electrode portions including intervening gaps; depositing a second layer of undoped SiO2 over and contacting the first layer to a thickness sufficient to leave a second layer thickness portion overlying the first layer following a subsequent oxide chemical mechanical polish (CMP) planarization process; carrying out the oxide CMP process to planarize the second layer and leave the second layer thickness portion; and forming metal filled local interconnects extending through a thickness portion of the first and second layers.