Abstract: A protection circuit protects an integrated circuit (“IC”) from peak voltages and includes a voltage divider coupled to a silicon controlled rectifier. The voltage divider allows for adjustment of the trigger voltage, trigger current, and holding voltage of the protection circuit so that the protection circuit can conduct current after a particular voltage level has been applied to the protection circuit without accidental triggering on by, for example, noise.

Abstract: A semiconductor structure and a testing method thereof are provided. The semiconductor structure comprises a substrate, a well, an isothermal heating layer, a first dielectric layer, an interconnection material layer and a second dielectric layer. Wherein, the well is disposed in the substrate, the isothermal heating layer is disposed over the well, the first dielectric layer is disposed between the well and the isothermal heating layer, the interconnection material layer is disposed over the isothermal heating layer, and the second dielectric layer is disposed between the isothermal heating layer and the interconnection material layer. The isothermal heating layer is adapted for maintaining the interconnection metal layer at a predetermined testing temperature so that the testing result can be precise and the testing time can be reduced. Moreover, a low level current can be used as the testing current.

Abstract: Due to the test current and the test temperature of the wafer-level reliability depend on each other in those conventional arts, the result of electromigration etc is not sure cause of the test current or the test temperature and debases the reliability of the test result. In the present invention, the electromigration test and the stress migration test of the wafer-level reliability are independently controlled, respectively. Therefore, the cause of electromigration and the stress migration can be sure resulting from the test current or the test temperature respectively. Furthermore, the isothermal heater of the present invention not only can keep a whole test wafer at a more uniform test temperature, but also can offset the electromagnetism resulted from the current of the isothermal heater by the arrangement of circuits thereof for reducing the effect of the electromagnetism.

Abstract: The present invention reveals an electrostatic discharge protection apparatus including a silicon controlled rectifier, a triggering voltage adapter network and a holding voltage adapter network. Additionally, the triggering voltage adapter network and the holding voltage adapter network are coupled to the silicon controlled rectifier. The present invention can change the characteristic of current vs. voltage by adjusting the triggering voltage and the holding voltage of the silicon controlled rectifier to meet the special requirement of various chips, and effectively prevent the chips from being damaged caused by the electrostatic discharging.

Abstract: A protection circuit protects an integrated circuit (“IC”) from peak voltages and includes a voltage divider coupled to a silicon controlled rectifier. The voltage divider allows for adjustment of the trigger voltage, trigger current, and holding voltage of the protection circuit so that the protection circuit can conduct current after a particular voltage level has been applied to the protection circuit without accidental triggering on by, for example, noise.

Abstract: The present invention reveals an electrostatic discharge protection apparatus including a silicon controlled rectifier, a triggering voltage adapter network and a holding voltage adapter network. Additionally, the triggering voltage adapter network and the holding voltage adapter network are coupled to the silicon controlled rectifier. The present invention can change the characteristic of current vs. voltage by adjusting the triggering voltage and the holding voltage of the silicon controlled rectifier to meet the special requirement of various chips, and effectively prevent the chips from being damaged caused by the electrostatic discharging.

Abstract: An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current thereby to prevent the SCR from being triggered by the low current. Thus, a trigger current required to activate the SCR can be greatly increased thereby to maintain an internal circuit at a normal operating state.