Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.

Abstract: A device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, source/drain structures over the substrate and on opposite sides of the gate structure, and a self-assemble monolayer (SAM) in contact with an inner sidewall of one of the gate spacer and in contact with a top surface of the gate structure.

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

Abstract: A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.

Abstract: A light-emitting device includes a metal connecting structure; a metal reflective layer on the metal connecting structure; a barrier layer between the metal connecting structure and the metal reflective layer; a light-emitting stack on the metal reflective layer; a dielectric layer between the light-emitting stack and the metal reflective layer, and a first extension electrode and a second extension electrode on the light-emitting stack and away from the metal reflective layer. The dielectric layer includes a first part and a second part separated from the first part from a cross section of the light-emitting device. The first extension electrode and the second extension electrode respectively align with the first part and the second part. From a cross section of the light-emitting stack, the first extension electrode has a first width and the first part has a second width larger than the first width.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.