Patents by Inventor Fu Gow Tarntair

Fu Gow Tarntair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR MANUFACTURING MICRO LIGHT-EMITTING DIODE CHIPS
    Publication number: 20210091258
    Abstract: A method for manufacturing micro light-emitting diode chips includes the steps of: providing a to-be-divided light-emitting component, which includes a metal substrate and a plurality of micro light-emitting diode dies disposed on the metal substrate to permit the metal substrate to define a to-be-etched region among the micro light-emitting diode dies; and etching the metal substrate to remove the to-be-etched region so as to divide the light-emitting component into a plurality of the micro light-emitting diode chips.
    Type: Application
    Filed: March 23, 2020
    Publication date: March 25, 2021
    Inventors: Ray-Hua Horng, Hsiang-An Feng, Cheng-Yu Chung, Chia-Wei Tu, Fu-Gow Tarntair
  • Method for manufacturing micro light-emitting diode chips
    Patent number: 10944024
    Abstract: A method for manufacturing micro light-emitting diode chips includes the steps of: providing a to-be-divided light-emitting component, which includes a metal substrate and a plurality of micro light-emitting diode dies disposed on the metal substrate to permit the metal substrate to define a to-be-etched region among the micro light-emitting diode dies; and etching the metal substrate to remove the to-be-etched region so as to divide the light-emitting component into a plurality of the micro light-emitting diode chips.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: March 9, 2021
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Ray-Hua Horng, Hsiang-An Feng, Cheng-Yu Chung, Chia-Wei Tu, Fu-Gow Tarntair
  • Method of producing field emission display
    Publication number: 20030059968
    Abstract: A method for producing a field emission display, especially for producing a carbon nanotube field emission display, is invented. The invention is to produce a field emission display via different control media, e.g. diode or triode field emission arrays. In addition, the invention discloses the procedure of controlling the field emission array of carbon nanotube stably by thin film transistor technology, and provides the method of producing the collimated carbon nanotube.
    Type: Application
    Filed: October 25, 2002
    Publication date: March 27, 2003
    Applicant: National Science Council
    Inventors: Huang-Chung Cheng, Fu-Gow Tarntair, Kuo-Ji Chen
  • Process for forming a film on a substrate having a field emitter
    Patent number: 6517405
    Abstract: A process for forming a film on a substrate having a field emitter is disclosed. The substrate and field emitter are cleaned by hydrogen plasma to remove the impurities. Next, a silicon carbide film is selectively formed over said field emitter. A negative bias voltage of about 150 V to about 300 V is applied to substrate for increasing the nucleation sites of said silicon carbide film. Afterward, the negative bias voltage is stopped so as to grow a carbon-containing film from said silicon carbide film.
    Type: Grant
    Filed: January 13, 2000
    Date of Patent: February 11, 2003
    Assignee: National Science Council
    Inventors: Huang-Chung Cheng, Fu Gow Tarntair, Wei Kai Hong
  • Method of fabricating a field emission device on the sidewalls of holes formed in an insulator layer
    Patent number: 6350628
    Abstract: A method of fabricating a field emission device is disclosed. A conductive layer is etched back by means of a reactive ion etching (RIE) process to form a chimney-shaped structure of diode-type or triode-type to serve as a field emitter. The field emission device of the present invention can be manufactured at a temperature of below 400° C., without complicated techniques or equipment, and is suitable for application in flat panel displays having large area.
    Type: Grant
    Filed: January 13, 2000
    Date of Patent: February 26, 2002
    Assignee: National Science Council
    Inventors: Huang-Chung Cheng, Wei Kai Hong, Fu Gow Tarntair