Patents by Inventor FU-HSING CHOU

FU-HSING CHOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE, MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
    Publication number: 20180366573
    Abstract: A semiconductor device, a memory device, and a manufacturing method of the same are provided. The memory device includes a substrate, a floating gate, a gate insulation layer, an inter-gate dielectric layer, and a control gate. The control gate is a multi-layer structure with three or more layers, and at least one layer of the multi-layer structure is a metal silicide layer.
    Type: Application
    Filed: June 15, 2017
    Publication date: December 20, 2018
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Fu-Hsing Chou, Yao-Fu Chan, Tzung-Ting Han
  • Method of improving localized wafer shape changes
    Patent number: 10056395
    Abstract: A method of manufacturing an integrated circuit including forming trenches into the surface of a crystalline wafer and the trenches extending along a <100> lattice direction is disclosed. Such wafer can experience less deformation due to less stress induced when the trenches are filled using a spin-on dielectric material. Thus, the overlay issue caused by wafer shape change is resolved.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: August 21, 2018
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chi-Pin Lu, Pei-Ci Jhang, Fu-Hsing Chou, Chih-Hsiung Lee
  • METHOD OF IMPROVING LOCALIZED WAFER SHAPE CHANGES
    Publication number: 20170287921
    Abstract: A method of manufacturing an integrated circuit including forming trenches into the surface of a crystalline wafer and the trenches extending along a <100> lattice direction is disclosed. Such wafer can experience less deformation due to less stress induced when the trenches are filled using a spin-on dielectric material. Thus, the overlay issue caused by wafer shape change is resolved.
    Type: Application
    Filed: October 11, 2016
    Publication date: October 5, 2017
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: CHI-PIN LU, PEI-CI JHANG, FU-HSING CHOU, CHIH-HSIUNG LEE