Abstract: A photoelectrochemical device includes a substrate, a first titanium nitride (TiN) layer coated on the substrate, and a first nitrogen-doped titanium dioxide (N—TiO2) layer coated on the first TiN layer. The photoelectrochemical device has enhanced photoelectric conversion efficiency and can be made by a simple, effective method, thereby shortening the manufacturing time and lowering the manufacturing cost thereof.

Abstract: A solar energy absorbing device includes a substrate and a solar selective absorber film. The solar selective absorber film has a bottom surface attached on the substrate, and a top surface opposite to the bottom surface. The solar selective absorber film is a TiNxOy based film, and x and y vary from 1 to 0.1 and 0.2 to 2, respectively, from the bottom surface to the top surface of the solar selective absorber film.

Abstract: A solar energy absorbing device includes a substrate and a solar selective absorber film. The solar selective absorber film has a bottom surface attached on the substrate, and a top surface opposite to the bottom surface. The solar selective absorber film is a TiNxOy based film, and x and y vary from 1 to 0.1 and 0.2 to 2, respectively, from the bottom surface to the top surface of the solar selective absorber film.

Abstract: A method for electrodepositing copper nanoparticles includes the steps of a) providing a reaction system having an electrolyte solution, a conductive nitride film used as a working electrode and immersed in the electrolyte solution, a copper metal or a copper alloy used as an auxiliary electrode and immersed in the electrolyte solution, and a reference electrode immersed in the electrolyte solution; and b) applying a pulse voltage to the reaction system to form copper nanoparticles on a surface of the conductive nitride film.

Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for electrodepositing copper nanoparticles includes the steps of a) providing a reaction system having an electrolyte solution, a conductive nitride film used as a working electrode and immersed in the electrolyte solution, a copper metal or a copper alloy used as an auxiliary electrode and immersed in the electrolyte solution, and a reference electrode immersed in the electrolyte solution; and b) applying a pulse voltage to the reaction system to form copper nanoparticles on a surface of the conductive nitride film.

Abstract: A method for forming a ZrO2 oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a ZrN film, and a cathode into an electrolyte of which the temperature range is from 65° C. to 75° C. Said electrolyte contains barium acetate or barium hydroxide ranging from 0.3 M to 0.7 M and sodium hydroxide or potassium hydroxide ranging from 1.5 M to 2.5 M. The method includes a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form a ZrO2 film on a surface of the ZrN film of the anode. A DC power supply, an AC power supply, unipolar pulse power supply or bipolar pulse power supply is applied to said anode and cathode in constant-voltage mode or constant-current mode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10?4 Torr to 5×10?2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10?4 Torr to 5×10?2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

Abstract: A new technique to synthesize barium titanate (BaTiO3) on homogeneous substrates (titanium) or heterogeneous substrates (silicon wafers, metal, glass, ceramics, polymers, other metals, etc.) is disclosed to include a first step to deposit a titanium film on a substrate by sputtering, and a second step to synthesize barium titanate film with uniformly dispersed spherical particles on the titanium-coated substrate in a electrolyte containing barium ions by electrochemically anodic oxidation.

Abstract: A titanium dioxide films synthesizing method includes the step of coating a titanium film on the surface of a homogenous (or heterogeneous) substrate, and the step of using the titanium-coated substrate as anode in an electrolyte to synthesize an nano-structured titanium dioxide film with single anatase phase on the surface of the titanium film by employing electrochemical anodic oxidation at room temperature.

Abstract: A new technique to synthesize barium titanate (BaTiO3) on homogeneous substrates (titanium) or heterogeneous substrates (silicon wafers, metal, glass, ceramics, polymers, other metals, etc.) is disclosed to include a first step to deposit a titanium film on a substrate by sputtering, and a second step to synthesize barium titanate film with uniformly dispersed spherical particles on the titanium-coated substrate in a electrolyte containing barium ions by electrochemically anodic oxidation.