Abstract: Within a method for forming a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a patterned conductor layer having a topographic variation at a periphery of the patterned conductor layer. There is then formed over the substrate and passivating the topographic variation at the periphery of the patterned conductor layer a planarizing passivation layer formed of a thermally reflowable material. There is then formed upon the planarizing passivation layer a dimensionally stabilizing layer. Finally, there is then thermally annealed the microelectronic fabrication to form from the planarizing passivation layer a thermally annealed planarizing passivation layer. By employing formed upon the planarizing passivation layer the dimensionally stabilizing layer, there is attenuated within the thermally annealed planarizing passivation layer replication of the topographic variation at the periphery of the patterned conductor layer.

Abstract: A method whereby the region where the field oxide has to be grown is defined with a layer of photoresist. The present invention teaches the implantation of N2 into the layer of silicon dioxide (SiO2) that is not covered by the layer of photoresist. The photoresist is removed and the field oxide (FOX) is grown in the areas from where the photoresist has been removed.

Abstract: This invention relates to the fabrication of integrated circuit devices and more particularly to an improved, graded, silicon oxynitride process step, in order to form an unconventional dielectric layer, having an adjustable effective dielectric constant, for the purpose of fabricating capacitors for both DRAM and Logic technologies. During the special CVD process for the oxynitride layer, its composition is varied such that three distinct regions are created in the direction of film growth. The dielectric property of the lower region is close to silicon oxide, the dielectric property of the upper region is close to silicon oxynitride and the dielectric property of the intermediate transition zone is between that of silicon oxide and oxynitride.