Patents by Inventor Fu-Jung Huang

Fu-Jung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12237398
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: February 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Ming Kuo, Po-Jen Chuang, Yu-Ren Wang, Ying-Wei Yen, Fu-Jung Chuang, Ya-Yin Hsiao, Nan-Yuan Huang
  • Patent number: 12211787
    Abstract: A semiconductor structure and the manufacturing method thereof are disclosed. An exemplary semiconductor structure includes a first source/drain contact and a second source/drain contact spaced apart by a gate structure, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, a conductive feature disposed in the etch stop layer and in direct contact with the first source/drain contact and the second source/drain contact, a dielectric layer over the etch stop layer, and a contact via extending through the dielectric layer and electrically connected to the conductive feature. By providing the conductive feature, a number of metal lines in an interconnect structure of the semiconductor structure may be advantageously reduced.
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: January 28, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chao-Hsun Wang, Wang-Jung Hsueh, Fu-Kai Yang, Mei-Yun Wang, Sheng-Hsiung Wang, Shih-Hsien Huang
  • Patent number: 6605209
    Abstract: A self-sustaining non-biodegradable waste breakdown system has a preprocessing assembly, a heating assembly, a reaction assembly and a filtering assembly. The reaction assembly has a filtering layer to retain long chain molecules of the melted waste for continuous breakdown so as to change the long chain molecules into short chain molecules. The filtering-adjusting mechanism of the filtering assembly recycles the medium with a special concentration, viscosity and heat resistance in the reaction chamber.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: August 12, 2003
    Assignee: Green Formosa Energy Technology Co., Ltd.
    Inventors: Cheng-En Lei, Fu-Jung Huang, Wen-Pin Wu, Shyh-Shin Chen, Joe Yueh Chou
  • Publication number: 20030089646
    Abstract: A self-sustaining non-biodegradable waste breakdown system has a preprocessing assembly, a heating assembly, a reaction assembly and a filtering assembly. The reaction assembly has a filtering layer to retain long chain molecules of the melted waste for continuous breakdown so as to change the long chain molecules into short chain molecules. The filtering-adjusting mechanism of the filtering assembly recycles the medium with a special concentration, viscosity and heat resistance in the reaction chamber.
    Type: Application
    Filed: November 13, 2001
    Publication date: May 15, 2003
    Inventors: Cheng-En Lei, Fu-Jung Huang, Wen-Pin Wu, Shyh-Shin Chen, Joe Yueh Chou