Abstract: A light-emitting device includes a circuit board having a light-reflecting region, light-emitting elements arranged on the circuit board, a first reflective element disposed on the circuit board, and a second reflective element disposed on the first reflective element and including apertures overlap the circuit board along a normal direction of the circuit board. The first reflective element is disposed between the second reflective element and the circuit board. The light-emitting elements are disposed in the apertures. At least a part of the first reflective element is located in at least one of the apertures when viewed from the normal direction. The first reflective element and the second reflective element respectively overlap at least part of the light-reflecting region along the normal direction. The first reflective element partially overlaps the second reflective element along the normal direction.

Abstract: A method for manufacturing a semiconductor structure includes forming a semiconductor portion which has an exposed region; forming two fin sidewalls which are disposed at two opposite sides of the exposed region of the semiconductor portion, and which include a dielectric material; and performing an etching process such that the exposed region of the semiconductor portion is etched away to form a recess while a protection layer is formed to protect each of the fin sidewalls during the etching process. Other methods for manufacturing the semiconductor structure are also disclosed.

Abstract: A pixel shifting method and a control method of a display screen are provided. The pixel shifting method is adapted for the display screen, and the display screen includes at least one processor to perform the following steps. When the display screen displays a picture, pixel shifting is performed on a central point of the picture according to a shifting path. A plurality of pixels on the shifting path is allowed to be sequentially displayed on the display screen according to a plurality of different color attributes. The color attribute of each of the plurality of pixels is changed after a cycle of the pixel shifting ends.

Abstract: A cross-shape transfer blade is configured to, in operation, be mounted or coupled to an end of a transfer robot arm (TRA). The cross-shape robot or transfer blade includes a plurality of raised regions to contact a backside of a workpiece or thin workpiece such that the cross-shape transfer blade supports and transports the respective workpeice between various locations within a semiconductor manufacturing plant (FAB). The cross-shape transfer blade includes a first prong structure, a second prong structure, a first wing structure, and a second wing structure. Respective ones of the plurality of raised regions are at corresponding ones of the first prong structure, the second prong structure, the first wing structure, and the second wing structure minimizing contact between the backside of the workpiece or thin workpiece and the cross-shape transfer blade when the workpiece or thin workpiece is being transferred, transported, and supported by the cross-shape transfer blade.

Abstract: A processing device for processing opposing edges of a flexible sheet body is provided, including: a base; a first suction mechanism, arranged on the base and extending along a first direction, including first suction openings; at least one second suction mechanism, arranged on the base and extending in parallel with the first suction mechanism, including second suction openings, the at least one second suction mechanism and the first suction mechanism being relatively movable; a support platform, being adjustable and located between the first suction mechanism and the at least one second suction mechanism; at least one rail mechanism, arranged on the base; at least one gantry mechanism, movably arranged on the at least one rail mechanism; and at least two cutting mechanisms, arranged on the at least one gantry mechanism, at least one of the at least two cutting mechanisms being movable in a second direction.

Abstract: A method for manufacturing a semiconductor structure includes forming a semiconductor portion which has an exposed region; forming two fin sidewalls which are disposed at two opposite sides of the exposed region of the semiconductor portion, and which include a dielectric material; and performing an etching process such that the exposed region of the semiconductor portion is etched away to form a recess while a protection layer is formed to protect each of the fin sidewalls during the etching process. Other methods for manufacturing the semiconductor structure are also disclosed.

Abstract: A reading device for capacitive sensing element comprises a differential capacitive sensing element, a modulator, a charge-voltage conversion circuit, a phase adjustment circuit, a demodulator and a low-pass filter. The modulator outputs a modulation signal to the common node of the capacitive sensing element and modulates the output signal of the capacitive sensing element. The two input terminals of the charge-to-voltage conversion circuit are connected to two non-common nodes of the capacitive sensing element. The charge-to-voltage converter read the output charge of the capacitive sensing element and convert it into a voltage signal. The modulator generates a demodulation signal through the phase adjustment circuit. The demodulator receives the demodulation signal from the phase adjustment circuit and demodulates the output of the charge-to-voltage conversion circuit. The low-pass filter is connected to the output of the demodulator for filtering the demodulated voltage signal to output the read signal.

Abstract: A signal filter includes a notch filter and a wideband filter. The notch filter is configured to perform a band-rejection filtering operation according to a band-rejection filtering property. The wideband filter is coupled to the notch filter, and is configured to perform a wideband filtering operation according to a wideband filtering property. The band-rejection filtering property includes a first cutoff frequency, a frequency bandwidth, a relatively high quality factor and a relatively low coupling coefficient. The wideband filtering property includes a second cutoff frequency, a relatively low quality factor and a relatively high coupling coefficient. The first and the second cutoff frequencies have a frequency difference therebetween. A ratio of the frequency difference to the frequency bandwidth is within a preset ratio range being from 2.5% to 20%.

Abstract: An electronic device includes a housing, a first metal trace, a conductive pillar, a circuit board, and a metal connecting element. The housing includes a conductive via and a concave hole, and the conductive via passes through the housing. The first metal trace is disposed on an inner surface of the housing, and the conductive via is electrically connected to the first metal trace. The conductive pillar is disposed in the concave hole and exposed from the housing, and the conductive pillar is electrically connected to the conductive via. The circuit board is disposed inside the housing. The metal connecting element is disposed on the circuit board and electrically connected to the first metal trace.

Abstract: Processing apparatuses and methods are provided. A processing apparatus includes an electrostatic chuck configured to hold a semiconductor wafer during a process performed on the semiconductor wafer; a first electrode configured to bias a first region of the electrostatic chuck with a first bias; and a second electrode configured to bias a second region of the electrostatic chuck with a second bias.

Abstract: An electronic device is provided. The electronic device includes a circuit board, a first light-emitting element and a second light-emitting element disposed on the circuit board along a first direction. The electronic device includes a light guide plate and an adhesive structure between the circuit board and the light guide plate and having a first opening and a second opening. The electronic device includes a reflective layer disposed between the adhesive structure and the circuit board. The first and second light-emitting elements are disposed in the first and second openings respectively. A portion of the adhesive structure disposed between the first and second openings includes a first part and a second part, the first part is disposed between the first and second light-emitting elements, and the second part is connected with the first part and extends toward the light guide plate.

Abstract: Embodiments of the present disclosure provide a protective layer deposited over bottom structures to protect the bottom structure during fabrication of upper structures. The protective layer may prevent STI loss and bottom spacer loss during source/drain etch back process. The protective layer may also improve process uniformity by also eliminate process loading or non-uniformity in the STI loss, fin sidewall spacer height, and recess profiles. The protective layer may also slow down fin sidewall spacer etching rate during semiconductor fin etch back, thus, improving source/drain regions profile control.

Abstract: An acoustic-wave ladder filter has a first port, a second port and a ground terminal, and includes a series resonator and a shunt circuit. The series resonator is coupled to and disposed between the first and the second ports in series. The shunt circuit is coupled to and disposed between the series resonator and the grounding terminal, and includes a shunt resonator and a functional circuit. The functional circuit is connected in series with the shunt resonator. The functional circuit includes a resistor having a resistance value. The resistance value is greater than 5 Ohms and is smaller than 50 ohms. The functional circuit may further have an inductance.

Abstract: A method of opportunistic screening of osteoporosis includes obtaining a plain film chest X-ray (CXR); extracting regions of interest (ROIs) from the plain film CXR; and providing individual bone mineral density (BMD) scores corresponding to the extracted ROIs and a joint BMD corresponding to the plain film CXR based on a multi-ROI model by performing: inputting the extracted ROIs into a backbone network to generate individual feature vectors, each individual feature vector corresponding to one of the extracted ROIs; concatenating the individual feature vectors into a joint feature vector; individually decoding the individual feature vectors by a shared fully connected (FC) layer to generate the individual BMDs, each individual BMD corresponding to one of the individual feature vectors; and decoding the joint feature vector by a separate FC layer to generate the joint BMD.

Abstract: The present disclosure provides an exercise assistive device. The present disclosure also provides a method for estimating stamina level and a method for adjusting the method according to a user's anaerobic energy level and aerobic energy level. The present disclosure further provides the several types and applications of the exercise assistive device.

Abstract: A reading device for capacitive sensing element comprises a differential capacitive sensing element, a modulator, a charge-voltage conversion circuit, a phase adjustment circuit, a demodulator and a low-pass filter. The modulator outputs a modulation signal to the common node of the capacitive sensing element and modulates the output signal of the capacitive sensing element. The two input terminals of the charge-to-voltage conversion circuit are connected to two non-common nodes of the capacitive sensing element. The charge-to-voltage converter read the output charge of the capacitive sensing element and convert it into a voltage signal. The modulator generates a demodulation signal through the phase adjustment circuit. The demodulator receives the demodulation signal from the phase adjustment circuit and demodulates the output of the charge-to-voltage conversion circuit. The low-pass filter is connected to the output of the demodulator for filtering the demodulated voltage signal to output the read signal.

Abstract: A microelectromechanical sensing apparatus with calibration function comprises a microelectromechanical sensor and an IC chip. The microelectromechanical sensor comprises a proof mass, a movable driving electrode and a movable sensing electrode disposed on the proof mass, and a stationary driving electrode and stationary sensing electrode disposed on a substrate, wherein the sensing electrodes output a sensing signal when the proof mass vibrates.

Abstract: A package structure is disclosed. The package structure includes a first substrate, a second substrate, a gap, and a directing structure. The second substrate is disposed under the first substrate. The gap is between the first substrate and the second substrate. The gap includes a first region and a second region. The first region is configured to accommodate a filling material. The directing structure is disposed in a flow path of the filling material and configured to reduce a migration of the filling material from the first region to the second region.

Abstract: Disclosed is a method of manufacturing a semiconductor device. The method includes forming a patterned hardmask over an underlying target layer on a substrate; and performing plasma fabrication operations in parallel on the patterned hardmask and underlying target layer in a plasma etching chamber using a plasma etch gas and a selective source gas. The plasma operations include forming a protective cap on the patterned hardmask; and removing portions of the underlying layer that are not covered by the patterned hardmask. In various embodiments, the selective source gas includes a chemical compound that includes a halogen gas that can be dissociated into a metal and a halogen, and the plasma operations include dissociating the metal and the halogen in the selective source gas and forming a protective cap on the patterned hardmask using the metal that has been dissociated.