Abstract: A fabricating method of a semiconductor chip includes the following steps. Firstly, a substrate is provided, wherein an amorphous semiconductor layer is formed in a first surface of the substrate. Then, a first metal layer is formed on the amorphous semiconductor layer. Then, a thermal-treating process is performed to result in a chemical reaction between the first metal layer and a part of the amorphous semiconductor layer, thereby producing an amorphous metal semiconductor compound layer. Afterwards, a microwave annealing process is performed to recrystallize the amorphous metal semiconductor compound layer as a polycrystalline metal semiconductor compound layer.

Abstract: The present invention relates a microwave activation annealing process, which includes: the providing of a semiconductor process to form a semiconductor device on a substrate; activation: using a microwave device to perform microwave activation on the semiconductor device with frequency in the range of 2.45 GHz and 24.15 GHz and temperature in the range of 100° C. and 600° C.; annealing: using the microwave device to perform microwave annealing on the semiconductor device with frequency in the range 2.45 GHz to 24.15 GHz and temperature in the range 100° C. to 600° C.; by doing so, the present invention can, in the premise without the destruction of material property and structural interface and be able to shorten process time and enhance heating homogeneity, achieve the objective of activation annealing, hence, it can solve the defects caused by the heat treatment technique of prior art high temperature activation annealing.