Abstract: The invention provides a touch display panel and a manufacturing method therefor. The touch display panel comprises a substrate; a display region disposed on the substrate; an opening region disposed on the substrate and adjacent to the display region; a plurality of touch electrodes disposed in the display region; a plurality of signal lines electrically connected to the touch electrodes; a common voltage loop surrounding the display region and having a first portion and a second portion spaced apart and adjacent to the opening region; a connection structure disposed between the first portion and the second portion; and a plurality of first dummy signal lines electrically connected to the connection structure; wherein the first portion is electrically connected to the second portion through the connection structure.

Abstract: The invention provides a display panel, comprising: a substrate having a peripheral area and a display area adjacent to each other, the display area provided with a plurality of pixel units; a gate driving unit provided in the peripheral area; a connection unit provided between the gate driving unit and the display area, and electrically connected to the gate driving unit and the plurality of pixel unit; and a shielding unit provided on the connection unit; wherein a projection area of the connection unit on the substrate corresponds to a projection area of the shielding unit on the substrate, and the shielding unit is electrically connected to a fixed potential.

Abstract: The invention provides a touch display panel and a manufacturing method therefor. The touch display panel comprises a substrate; a display region disposed on the substrate; an opening region disposed on the substrate and adjacent to the display region; a plurality of touch electrodes disposed in the display region; a plurality of signal lines electrically connected to the touch electrodes; a common voltage loop surrounding the display region and having a first portion and a second portion spaced apart and adjacent to the opening region; a connection structure disposed between the first portion and the second portion; and a plurality of first dummy signal lines electrically connected to the connection structure; wherein the first portion is electrically connected to the second portion through the connection structure.

Abstract: The invention discloses a display panel, comprising: a first substrate including a display region and a peripheral region adjacent to each other; a plurality of pixel units disposed on the first substrate and located in the display region; a control circuit disposed on the first substrate, located in the peripheral region and electrically connected to the pixel units; a planarization layer disposed on the first substrate, extending from the display region to the peripheral region and covering the pixel units and the control circuit; and a bonding pad disposed on the first substrate and located above the planarization layer; wherein a projection area of the bonding pad on the first substrate and a projection area of the control circuit on the first substrate have an overlapped region.

Abstract: The invention provides a display device and a method of manufacturing a thin film transistor. The method of manufacturing a thin film transistor comprises: (A) providing a substrate; (B) forming a light shielding layer on the substrate, and patterning the light shielding layer to form a patterned light shielding layer; (C) forming a buffer layer on the substrate; (D) forming a semiconductor layer on the substrate, and patterning the semiconductor layer to form a patterned semiconductor layer; (E) forming an insulating layer on the substrate; and (F) forming a conductive layer on the substrate, and patterning the conductive layer to form a patterned conductive layer; wherein the same mask is used for patterning the light shielding layer and the semiconductor layer. Photoelectric effect of the thin film transistor outside the display region can be effectively avoided, while reducing the number of masks in the production process.

Abstract: The present invention of the embodiment provides a drive circuit, comprising a first group of drive circuits and a second group of drive circuits each having multiple stages of gate drive circuits connected in series, each stage of the gate drive circuits comprising a shift register outputting a first gate drive signal and a touch voltage stabilizing unit coupled to the shift register, the touch voltage stabilizing unit comprising a reference end electrically connected to a reference potential of the shift register, a first voltage stabilizing end electrically connected to the first gate drive signal, a second voltage stabilizing end outputting a second gate drive signal and a signal end electrically connected to a control signal, wherein the control signal disables the touch voltage stabilizing unit during a display period, and the control signal enables the touch voltage stabilizing unit during a touch period.

Abstract: The invention discloses a display panel, comprising: a first substrate including a display region and a peripheral region adjacent to each other; a plurality of pixel units disposed on the first substrate and located in the display region; a control circuit disposed on the first substrate, located in the peripheral region and electrically connected to the pixel units; a planarization layer disposed on the first substrate, extending from the display region to the peripheral region and covering the pixel units and the control circuit; and a bonding pad disposed on the first substrate and located above the planarization layer; wherein a projection area of the bonding pad on the first substrate and a projection area of the control circuit on the first substrate have an overlapped region.

Abstract: The invention provides a display device and a method of manufacturing a thin film transistor. The method of manufacturing a thin film transistor comprises: (A) providing a substrate; (B) forming a light shielding layer on the substrate, and patterning the light shielding layer to form a patterned light shielding layer; (C) forming a buffer layer on the substrate; (D) forming a semiconductor layer on the substrate, and patterning the semiconductor layer to form a patterned semiconductor layer; (E) forming an insulating layer on the substrate; and (F) forming a conductive layer on the substrate, and patterning the conductive layer to form a patterned conductive layer; wherein the same mask is used for patterning the light shielding layer and the semiconductor layer. Photoelectric effect of the thin film transistor outside the display region can be effectively avoided, while reducing the number of masks in the production process.

Abstract: The present invention of the embodiment provides a drive circuit, comprising a first group of drive circuits and a second group of drive circuits each having multiple stages of gate drive circuits connected in series, each stage of the gate drive circuits comprising a shift register outputting a first gate drive signal and a touch voltage stabilizing unit coupled to the shift register, the touch voltage stabilizing unit comprising a reference end electrically connected to a reference potential of the shift register, a first voltage stabilizing end electrically connected to the first gate drive signal, a second voltage stabilizing end outputting a second gate drive signal and a signal end electrically connected to a control signal, wherein the control signal disables the touch voltage stabilizing unit during a display period, and the control signal enables the touch voltage stabilizing unit during a touch period.

Abstract: A manufacture method of a pixel structure is provided. A gate is formed over a substrate, and a gate insulator layer is formed over the substrate covering the gate. A semiconductor layer is formed over the gate insulator layer and a metal layer is formed over the semiconductor layer. A first mask layer is formed on the metal layer, and the metal layer is patterned to form a source/drain by using the first mask layer as etching mask. Afterward, a second mask layer is formed on the first mask layer and further covers a region between the source/drain. The semiconductor layer is patterned by using the first and second mask layers as etching mask, and then the first and second mask layers are removed. A passivation layer is formed over the substrate. A pixel electrode is formed on the passivation layer. The pixel electrode is electrically connected with the drain.