Patents by Inventor FU, Meng

FU, Meng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240069975
    Abstract: Resource optimized forwarding of classified requests to different instances of a microservice is provided. The process includes obtaining classified requests to a microservice. The classified requests are classified based on different microservice resource consumption types. Further, the method includes forwarding the classified requests to instances of the microservice with different assigned resource configurations. The forwarding is based on the different microservice resource consumption types of the classified requests.
    Type: Application
    Filed: August 30, 2022
    Publication date: February 29, 2024
    Inventors: Hao SHENG, Rong FU, Pan LI, Xiao Lin SUN, Yao CHEN, Qing Yuan MENG
  • Publication number: 20200279712
    Abstract: Provided is a gas discharge tube, including at least two electrodes and an insulating tube body, which is connected in a sealing manner with the electrodes to form a discharge inner cavity. A low-temperature sealing adhesive for sealing the discharge inner cavity is arranged in the gas discharge tube. The low-temperature sealing adhesive is melted at a specific low temperature to cause gas leakage in the discharge inner cavity.
    Type: Application
    Filed: July 5, 2016
    Publication date: September 3, 2020
    Inventors: Ji He, FU, Meng, WANG Feilong
  • Patent number: 6762096
    Abstract: A method of forming a polysilicon spacer with a vertical profile. A dielectric layer and a sacrificial layer are successively deposited to cover the entire surface of a polysilicon layer that covers an insulating structure. Then, CMP is used to remove parts of the sacrificial layer, the dielectric layer and the polysilicon layer to reach a planarized surface. Then, a part of the polysilicon layer outside the insulating structure is removed to make the insulating structures protrude from the top of the polysilicon layer. After removing the sacrificial layer, forming a second oxide layer on the exposed surface of the polysilicon layer and removing the dielectric layer, dry etching is used to remove the polysilicon layer that is not covered by the second oxide layer. The polysilicon layer left under the second oxide layer serves as a polysilicon spacer with a vertical profile.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: July 13, 2004
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Fsien-Fu Meng, Chyei-Jer Hsieh, Yu-Chen Ho, Hsu-Li Cheng, Ing-Ruey Liaw