Abstract: A ferroelectric memory device includes a memory layer, made of a silicon-based ferroelectric memory material. The silicon-based ferroelectric memory material includes a mesoporous silica film with nanopores and atomic polar structures on inner walls of the nanopores. The atomic polar structures are formed by asymmetrically bonding metal ions to silicon-oxygen atoms on the inner walls, and the silicon-based ferroelectric memory material includes semiconductor quantum dots, metal quantum dots and metal-semiconductor alloy quantum dots.

Abstract: A fabricating method of an electron-emitting device includes at least the following steps. A substrate having a first side and a second side is provided. The first side is opposite to the second side. A first electrode pattern layer is formed on the first side of the substrate. A conductive pattern layer is formed on the substrate and the first electrode pattern layer, and the conductive pattern layer partially covers the first electrode pattern layer. An electron-emitting region is formed in the conductive pattern layer. A second electrode pattern layer is formed on the second side of the substrate. The second electrode pattern layer partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.

Abstract: A fabricating method of an electron-emitting device is provided. The fabricating method of the electron-emitting device includes at least following procedures. Firstly, a substrate is provided. Next, a first electrode and a second electrode are formed on the substrate. Afterward, a conductive layer covering the first electrode and the second electrode is formed on the substrate. Then, a first conductive layer, a second conductive layer and a gap are formed by patterning the conductive layer. The gap is disposed between the first conductive layer and the second conductive layer. After that, a plasma process is performed at the first conductive layer and second conductive layer.

Abstract: A fabricating method of an electron-emitting device includes at least the following steps. A substrate having a first side and a second side is provided. The first side is opposite to the second side. A first electrode pattern layer is formed on the first side of the substrate. A conductive pattern layer is formed on the substrate and the first electrode pattern layer, and the conductive pattern layer partially covers the first electrode pattern layer. An electron-emitting region is formed in the conductive pattern layer. A second electrode pattern layer is formed on the second side of the substrate. The second electrode pattern layer partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.

Abstract: An electron-emitting device and a fabricating method thereof are provided. First, a substrate, having a first side and a second side which is opposite to the first side, is provided. Afterwards, a first electrode pattern layer is formed on the first side of the substrate. Next, a conductive pattern layer is formed on the substrate and the first electrode pattern layer. After that, an electron-emitting region is formed in the conductive pattern layer. Then, a second electrode pattern layer is formed on the second side of the substrate and partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.

Abstract: A fabricating method of an electron-emitting device is provided. The fabricating method of the electron-emitting device includes at least following procedures. Firstly, a substrate is provided. Next, a first electrode and a second electrode are formed on the substrate. Afterward, a conductive layer covering the first electrode and the second electrode is formed on the substrate. Then, a first conductive layer, a second conductive layer and a gap are formed by patterning the conductive layer. The gap is disposed between the first conductive layer and the second conductive layer. After that, a plasma process is performed at the first conductive layer and second conductive layer.

Abstract: A fabricating method of field emission triodes is provided. First, a cathode conductive layer, an insulator layer, and a gate layer are formed on a substrate. An opening is formed in the insulator layer and the gate layer to expose a portion of the cathode conductive layer. A metal layer is formed on the cathode conductive layer. A first anodization is performed so as to form a first metal anodization layer from a portion of the metal layer. After the first metal anodization layer is removed, a second metal anodization layer having a plurality of pores is formed. Thereafter, a catalyst layer is formed in the pores. Then, a plurality of carbon nanotubes are formed in the pores.

Abstract: An electron-emitting device and a fabricating method thereof are provided. First, a substrate, having a first side and a second side which is opposite to the first side, is provided. Afterwards, a first electrode pattern layer is formed on the first side of the substrate. Next, a conductive pattern layer is formed on the substrate and the first electrode pattern layer. After that, an electron-emitting region is formed in the conductive pattern layer. Then, a second electrode pattern layer is formed on the second side of the substrate and partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.

Abstract: A fabricating method of a field emission device array substrate is provided, which includes the following steps. First, a substrate is provided. Then, a cathode conductive layer is formed on the substrate. Moreover, an anodized layer with a plurality of holes is formed on the cathode conductive layer. Thereafter, a plurality of electron emitters is formed within the holes respectively. Additionally, an insulation layer is formed to cover the electron emitters and the anodized layer. Then, a gate material layer is formed on the insulation layer. Thereafter, the gate material layer is patterned to form a gate layer. The gate layer and the insulation layer have an opening to expose the electron emitters.

Abstract: A fabricating method of field emission triodes is provided. First, a cathode conductive layer, an insulator layer, and a gate layer are formed on a substrate. An opening is formed in the insulator layer and the gate layer to expose a portion of the cathode conductive layer. A metal layer is formed on the cathode conductive layer. A first anodization is performed so as to form a first metal anodization layer from a portion of the metal layer. After the first metal anodization layer is removed, a second metal anodization layer having a plurality of pores is formed. Thereafter, a catalyst layer is formed in the pores. Then, a plurality of carbon nanotubes are formed in the pores.