Abstract: An active anti-ESD pod for transporting photomask (reticle) comprises six body portions delimiting the container, an electrically conducting plate on the top portion, and an electrically conducting handle connected to the plate. An active charge sinker combined with a tag identifying the container or placed onto the photomask itself is provided to absorb the static electricity and to thus prevent charge accumulation that may otherwise cause ESD damage to the photomask.

Abstract: An active anti-ESD pod for transporting photomask (reticle) comprises six body portions delimiting the container, an electrically conducting plate on the top portion, and an electrically conducting handle connected to the plate. An active charge sinker combined with a tag identifying the container or placed onto the photomask itself is provided to absorb the static electricity and to thus prevent charge accumulation that may otherwise cause ESD damage to the photomask.

Abstract: A copper isotope is added to the layer of copper that is deposited to form the metal interface. Radioactivity emitted by the copper layer is measured during copper polishing, endpoint of the copper CMP is reached when this radioactivity starts to rapidly decrease. Another approach is to measure the radioactivity of the copper slurry that is removed during copper polishing. Polishing end-point is reached when the copper slurry radioactivity starts to rapidly increase. Yet another approach is to add copper isotopes to the copper seed layer and measure the radioactivity emitted by the seed layer. Polishing end-point is reached when the radioactivity emitted by the seed layer starts to rapidly increase.

Abstract: A method for forming copper interconnects, without inducing copper diffusion, by eliminating the copper chemical-mechanical polishing process. A semiconductor structure is provided having a first metal layer thereover. A first inter-metal dielectric layer is formed over the first metal layer and planarized. A first resist layer is formed over the first inter-metal dielectric layer, and the first resist layer and the first inter-metal dielectric layer are patterned to form via openings with the first metal layer forming the bottoms of the via openings. A barrier/seed layer, comprising a barrier layer and an overlying seed layer, is formed on the sidewalls and bottoms of the via openings. A self-align layer, composed of a high-resistivity, inorganic material, is formed over the barrier/seed layer. The self-align layer is patterned to reform the via openings and to form trench openings, exposing the barrier/seed layer on the bottoms and sidewalls of the via openings and on the bottoms of the trench openings.

Abstract: A copper isotope is added to the layer of copper that is deposited to form the metal interface. Radioactivity emitted by the copper layer is measured during copper polishing, endpoint of the copper CMP is reached when this radioactivity starts to rapidly decrease. Another approach is to measure the radioactivity of the copper slurry that is removed during copper polishing. Polishing end-point is reached when the copper slurry radioactivity starts to rapidly increase. Yet another approach is to add copper isotopes to the copper seed layer and measure the radioactivity emitted by the seed layer. Polishing end-point is reached when the radioactivity emitted by the seed layer starts to rapidly increase.