Abstract: The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.

Abstract: The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.

Abstract: A single-chip three-axis magnetic field sensing device is provided. This single-chip three-axis magnetic field sensing device comprises a substrate, a first sensing module, a second sensing module, a third sensing module and at least one coil. The substrate includes a surface. The first sensing module comprises at least one first magnetoresistive element and is configured to sense a first magnetic field component substantially parallel to the surface. The second sensing module comprises at least one second magnetoresistive element and is configured to sense a second magnetic field component substantially parallel to the surface. The third sensing module comprises at least one third magnetoresistive element and is configured to sense a third magnetic field component substantially perpendicular to the surface. Wherein one of the first magnetoresistive element and the second magnetoresistive element and the third magnetoresistive element is disposed right above or right below the at least one coil.

Abstract: A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface.

Abstract: A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: A tunneling magnetoresistance sensor includes a substrate, an insulating layer, a tunneling magnetoresistance component and a first electrode array. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is in contact with the insulating layer and includes at least one magnetic tunneling junction unit. The first electrode array disposed in direct contact with the insulating layer. The first electrode array includes a number of first electrodes. Each of the at least one magnetic tunneling junction unit is electrically connected to two neighboring first electrodes of the first electrode array to form a current-in-plane tunneling conduction mode.

Abstract: The present invention relates to an anisotropic magnetoresistive (AMR) device which comprises a substrate, an interconnect structure and a magnetoresistive material layer. The interconnect structure is disposed above the substrate and comprises a plurality of metal interconnect layers. The magnetoresistive material layer is disposed above the interconnect structure. The topmost metal interconnect layer of the plurality of metal interconnect layers comprises a conductive current-shunting structure. The conductive current-shunting structure is physically connected to the magnetoresistive layer without a conductive via plug.

Abstract: A magnetoresistive sensing device includes a substrate, a magnetic layer, a first electrode and a second electrode. The substrate has a reference plane. The first electrode and a second electrode are disposed over the reference plane. The magnetic layer is disposed over the reference plane and has a magnetization direction. A non-straight angle is formed between the magnetic layer and the reference plane. The first electrode and the second electrode are electrically connected with each other through an electric pathway of the magnetic layer. An included angle is formed between the electric pathway and the magnetization direction. Consequently, the magnetoresistive sensing device is capable of measuring a magnetic field change in a Z-axis direction, which is perpendicular to a reference plane.

Abstract: A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.

Abstract: An apparatus of a magnetoresistance sensor consisting of a substrate, a conductive unit on the substrate, and a magnetoresistance structure on the conductive unit is provided. The conductive unit includes a first surface and a second surface opposite to each other, and the first surface faces the substrate. The magnetoresistance structure is formed on the second surface of the conductive unit and is electrically connected to the conductive unit. The magnetoresistance sensor has high performance and reliability. A magnetoresistance sensor fabricating method based on this apparatus is also provided.

Abstract: A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle.

Abstract: A single-chip three-axis magnetic field sensing device is provided. This single-chip three-axis magnetic field sensing device comprises a substrate, a first sensing module, a second sensing module, a third sensing module and at least one coil. The substrate includes a surface. The first sensing module comprises at least one first magnetoresistive element and is configured to sense a first magnetic field component substantially parallel to the surface. The second sensing module comprises at least one second magnetoresistive element and is configured to sense a second magnetic field component substantially parallel to the surface. The third sensing module comprises at least one third magnetoresistive element and is configured to sense a third magnetic field component substantially perpendicular to the surface. Wherein one of the first magnetoresistive element and the second magnetoresistive element and the third magnetoresistive element is disposed right above or right below the at least one coil.

Abstract: A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle.

Abstract: A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface.

Abstract: A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. A patterned magnetoresistance component is formed above the metal damascene structure to electrically connect to the metal damascene structure.

Abstract: A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening. A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure.

Abstract: A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

Abstract: A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.

Abstract: A tunneling magnetoresistance sensor includes a substrate, an insulating layer, a tunneling magnetoresistance component and a first electrode array. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is in contact with the insulating layer and includes at least one magnetic tunneling junction unit. The first electrode array disposed in direct contact with the insulating layer. The first electrode array includes a number of first electrodes. Each of the at least one magnetic tunneling junction unit is electrically connected to two neighboring first electrodes of the first electrode array to form a current-in-plane tunneling conduction mode.