Abstract: A magnetic field sensing device includes first magnetoresistor units, second magnetoresistor units, a first testing conductive line, a second testing conductive line, and a driver. The first magnetoresistor units are arranged in a first direction. The second magnetoresistor units are arranged in the first direction, and the second magnetoresistor units are disposed on a side of the first magnetoresistor units in a second direction. The first testing conductive line is disposed on a side of the first magnetoresistor units in a third direction, and extends in the first direction. The second testing conductive line is disposed on a side of the second magnetoresistor units in the third direction, and extends in the first direction. The driver is configured to make two currents in a same direction and two currents in opposite directions pass through the first testing conductive line and the second testing conductive line at different times, respectively.

Abstract: A magnetic field sensing apparatus including a magnetic flux concentrator, a plurality of single direction magneto-resistive sensors and a time division switching circuit is provided. The magnetic flux concentrator has a plurality of corners. The single direction magneto-resistive sensors have a same pinning direction. The single direction magneto-resistive sensors are respectively disposed beside the corners. The time division switching circuit is coupled to the single direction magneto-resistive sensors, and is configured to switch at least a portion of the junctions between the single direction magneto-resistive sensors to change a circuit connection between the magneto-resistive sensors, thereby forming different Wheatstone bridges being configured to measure different magnetic field components of the external magnetic field in different directions.

Abstract: A current sensing method and a current sensor are provided. The current sensing method includes the steps of: exciting a magnetic core to generate at least one pair of regions having opposite magnetization directions in the magnetic core; providing a current to pass through a sensing region of the magnetic core, so that the magnetic core correspondingly generates a magnetic field change; and sensing the magnetic field change of the magnetic core by a pickup coil wound around the magnetic core to output an output signal corresponding to the current.

Abstract: A magnetic field sensing apparatus including a substrate, a plurality of magnetoresistance sensors and a plurality of magnetization direction setting devices is provided. A surface of the substrate includes a plurality of inclined surfaces and a plane surface. The magnetoresistance sensors include a plurality of first magnetoresistance sensors disposed at the inclined surfaces and a plurality of second magnetoresistance sensors disposed at the plane surface. The first magnetoresistance sensors include a first and a third portions and form a first full Wheatstone Bridge. The second magnetoresistance sensors include a second and a fourth portions and form a second full Wheatstone Bridge. The magnetization direction setting devices include a first and a second magnetization direction setting devices. The first magnetization direction setting device is disposed beside and overlaps with the first and the second portions.

Abstract: An angle sensing device including a first object, a second object, a magnetic field source, and a first magnetic sensor is provided. The second object is adapted to be rotated with respect to the first object, so that an inclined angle of the second object with respect to the first object is changed. The magnetic field source is connected to the second object. The first magnetic sensor is connected to the first object, and configured to sense a magnetic field generated by the magnetic field source. When the second object is rotated with respect to the first object, the magnetic field sensed by the first magnetic sensor changes, so that an output signal of the first magnetic sensor corresponding to the magnetic field changes.

Abstract: A magnetic field sensing device including a magnetic flux concentrating module and a plurality of vortex magnetoresistors is provided. The magnetic flux concentrating module has a first side, a second side, a third side and a fourth side, wherein the first side is parallel to the third side, the second side is parallel to the fourth side, and the first side is not parallel to the second side. The vortex magnetoresistors are disposed beside the first to the fourth sides. The vortex magnetoresistors have a same pinning direction. The pinning direction is inclined with respect to the first side and the second side. The vortex magnetoresistors are configured to be connected to form a plurality of different Wheatstone bridges, so as to sense magnetic field components in a plurality of different directions, respectively.

Abstract: An electric current sensor includes a substrate, a first sloped surface, a second sloped surface, at least one conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The first sloped surface and the second sloped surface are disposed on the substrate and arranged in a first direction. The at least one conductive wire extends along a second direction and is disposed beside the substrate. The first AMR unit is disposed on the first sloped surface. The second AMR unit is disposed on the second sloped surface. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.

Abstract: A magnetic field sensing apparatus including a magnetic flux concentrator and a plurality of single direction magneto-resistive sensors is provided. The magnetic flux concentrator has a first and a second end portions opposite to each other. The single direction magneto-resistive sensors have the same pinning direction and are disposed beside the magnetic flux concentrator. The single direction magneto-resistive sensors further include a plurality of first and second single direction magneto-resistive sensors. The first single direction magneto-resistive sensors are disposed beside the first end portion and further include a first and a third portions respectively being disposed two opposite sides of the first end portion. The first and a third portions are coupled to a first full Wheatstone bridge.

Abstract: A magnetic field sensing device includes at least one vortex magnetoresistor and at least one magnetization setting element. The vortex magnetoresistor includes a pinning layer, a pinned layer, a spacer layer, and a round free layer. The pinned layer is disposed on the pinning layer, and the spacer layer is disposed on the pinned layer. The round free layer is disposed on the spacer layer, and has a magnetization direction distribution with a vortex shape. The magnetization setting element is alternately applied and not applied an electric current to. When the magnetization setting element is not applied the electric current to, the magnetization direction distribution with the vortex shape of the round free layer is varied with an external magnetic field. When the magnetization setting element is applied the electric current to, a magnetic field generated by the magnetization setting element makes the round free layer achieve magnetic saturation.

Abstract: A motion sensing module including a plurality of first and second magneto-resistive sensors and a processor is provided. The processor executes the following steps S1 and S2. The step S1: the processor defines at least one first coordinate system from a first portion of the first magneto-resistive sensors and a second portion of the second magneto-resistive sensors. The processor defines at least one second coordinate system from a third portion of the first magneto-resistive sensors and a fourth portion of the second magneto-resistive sensors. The first and the second coordinate systems are rotational symmetry to each other. The step S2: the first and second magneto-resistive sensors generate a plurality of sensing results according to an external magnetic field. The processor performs calculations according to these sensing results based on the first and second coordinate systems to obtain a calculation result and measures motion information according to the calculation result.

Abstract: A magnetic field sensing device including a plurality of first magnetoresistor units and a plurality of second magnetoresistor units is provided. Magnetic field sensing axes of the first magnetoresistor units are parallel to a plane formed by a first direction and a third direction and are inclined with respect to the first direction and the third direction. Magnetic field sensing axes of the second magnetoresistor units are parallel to a plane formed by a second direction and the third direction and are inclined with respect to the second direction and the third direction. The first magnetoresistor units and the second magnetoresistor units are configured to measure a plurality of magnetic field components in a plurality of directions in three-dimensional space in a plurality of different time periods, respectively.

Abstract: A magnetic field sensing device including a substrate, a plurality of magnetic flux concentrators and a plurality of magneto-resistive sensors and a plurality of magnetic setting structures is provided. The magnetic flux concentrators, the magneto-resistive sensors and the magnetic setting structures are disposed on the substrate. At least a portion of the magneto resistive sensors is disposed at two opposite sides of each of the magnetic flux concentrators. The orthogonal projection regions of each of the magnetic flux concentrators, at least a portion of the magneto-resistive sensors, and each of the magnetic setting structures on the substrate are respectively a first orthogonal projection region, a second orthogonal projection region, and a third orthogonal projection region. The third orthogonal projection region at least overlaps the first orthogonal projection region and at least a portion of the second orthogonal projection region. Furthermore, a magnetic field sensing apparatus is also provided.

Abstract: An electric current sensor includes a substrate, a conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a third AMR unit, a fourth AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The conductive wire has a first conductive segment and a second conductive segment respectively disposed below a first end and a second end opposite to the first end of the substrate. The first AMR unit and the second AMR unit are disposed above the first end of the substrate. The third AMR unit and the fourth AMR unit are disposed above the second end of the substrate. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.

Abstract: A magnetic field sensing apparatus including a magnetic flux concentrator, a plurality of single direction magneto-resistive sensors and a time division switching circuit is provided. The magnetic flux concentrator has a plurality of corners. The single direction magneto-resistive sensors have a same pinning direction. The single direction magneto-resistive sensors are respectively disposed beside the corners. The time division switching circuit is coupled to the single direction magneto-resistive sensors, and is configured to switch at least a portion of the junctions between the single direction magneto-resistive sensors to change a circuit connection between the magneto-resistive sensors, thereby forming different Wheatstone bridges being configured to measure different magnetic field components of the external magnetic field in different directions.

Abstract: A magnetic field sensing apparatus including a substrate, a plurality of magnetoresistance sensors and a plurality of magnetization direction setting devices is provided. A surface of the substrate includes a plurality of inclined surfaces and a plane surface. The magnetoresistance sensors include a plurality of first magnetoresistance sensors disposed at the inclined surfaces and a plurality of second magnetoresistance sensors disposed at the plane surface. The first magnetoresistance sensors include a first and a third portions and form a first full Wheatstone Bridge. The second magnetoresistance sensors include a second and a fourth portions and form a second full Wheatstone Bridge. The magnetization direction setting devices include a first and a second magnetization direction setting devices. The first magnetization direction setting device is disposed beside and overlaps with the first and the second portions.

Abstract: A magnetic field sensing device includes first magnetoresistor units, second magnetoresistor units, a first testing conductive line, a second testing conductive line, and a driver. The first magnetoresistor units are arranged in a first direction. The second magnetoresistor units are arranged in the first direction, and the second magnetoresistor units are disposed on a side of the first magnetoresistor units in a second direction. The first testing conductive line is disposed on a side of the first magnetoresistor units in a third direction, and extends in the first direction. The second testing conductive line is disposed on a side of the second magnetoresistor units in the third direction, and extends in the first direction. The driver is configured to make two currents in a same direction and two currents in opposite directions pass through the first testing conductive line and the second testing conductive line at different times, respectively.

Abstract: An angle sensing device including a first object, a second object, a magnetic field source, and a first magnetic sensor is provided. The second object is adapted to be rotated with respect to the first object, so that an inclined angle of the second object with respect to the first object is changed. The magnetic field source is connected to the second object. The first magnetic sensor is connected to the first object, and configured to sense a magnetic field generated by the magnetic field source. When the second object is rotated with respect to the first object, the magnetic field sensed by the first magnetic sensor changes, so that an output signal of the first magnetic sensor corresponding to the magnetic field changes.

Abstract: An electric current sensor includes a substrate, a first sloped surface, a second sloped surface, at least one conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The first sloped surface and the second sloped surface are disposed on the substrate and arranged in a first direction. The at least one conductive wire extends along a second direction and is disposed beside the substrate. The first AMR unit is disposed on the first sloped surface. The second AMR unit is disposed on the second sloped surface. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.

Abstract: An electric current sensor includes a substrate, a conductive wire, a first anisotropic magnetoresistor (AMR) unit, a second AMR unit, a third AMR unit, a fourth AMR unit, a first magnetization direction setting device, and a second magnetization direction setting device. The conductive wire has a first conductive segment and a second conductive segment respectively disposed below a first end and a second end opposite to the first end of the substrate. The first AMR unit and the second AMR unit are disposed above the first end of the substrate. The third AMR unit and the fourth AMR unit are disposed above the second end of the substrate. The first magnetization direction setting device and the second magnetization direction setting device are configured to set magnetization directions of the AMR units.

Abstract: A magnetic field sensing device including a magnetic flux concentrating module and a plurality of vortex magnetoresistors is provided. The magnetic flux concentrating module has a first side, a second side, a third side and a fourth side, wherein the first side is parallel to the third side, the second side is parallel to the fourth side, and the first side is not parallel to the second side. The vortex magnetoresistors are disposed beside the first to the fourth sides. The vortex magnetoresistors have a same pinning direction. The pinning direction is inclined with respect to the first side and the second side. The vortex magnetoresistors are configured to be connected to form a plurality of different Wheatstone bridges, so as to sense magnetic field components in a plurality of different directions, respectively.