Patents by Inventor Fu-Tsang Wang

Fu-Tsang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8724390
    Abstract: Techniques are described herein for compensating for threshold voltage variations among memory cells in an array by applying different bias conditions to selected bit lines. Techniques are also described herein for connecting global bit lines to a variety of levels of memory cells in a 3D array, to provide for minimizing capacitance differences among the global bit lines.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: May 13, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Chun-Hsiung Hung, Shuo-Nan Hung, Ji-Yu Hung, Shih-Lin Huang, Fu-Tsang Wang
  • Publication number: 20120182804
    Abstract: Techniques are described herein for compensating for threshold voltage variations among memory cells in an array by applying different bias conditions to selected bit lines. Techniques are also described herein for connecting global bit lines to a variety of levels of memory cells in a 3D array, to provide for minimizing capacitance differences among the global bit lines.
    Type: Application
    Filed: September 26, 2011
    Publication date: July 19, 2012
    Applicant: Macronix International Co., Ltd.
    Inventors: CHUN-HSIUNG HUNG, Shuo-Nan Hung, Ji-Yu Hung, Shih-Lin Huang, Fu-Tsang Wang