Patents by Inventor Fu-Wei Yoa

Fu-Wei Yoa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PLASMA PROTECTION DIODE FOR A HEMT DEVICE
    Publication number: 20130240952
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a silicon substrate. A first III-V compound layer is disposed over the silicon substrate. A second III-V compound layer is disposed over the first III-V compound layer. The semiconductor device includes a transistor disposed over the first III-V compound layer and partially in the second III-V compound layer. The semiconductor device includes a diode disposed in the silicon substrate. The semiconductor device includes a via coupled to the diode and extending through at least the first III-V compound layer. The via is electrically coupled to the transistor or disposed adjacent to the transistor.
    Type: Application
    Filed: March 13, 2012
    Publication date: September 19, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: King-Yuen Wong, Chun-Wei Hsu, Chen-Ju Yu, Fu-Wei Yoa, Jiun-Lei Jerry Yu, Fu-Chih Yang, Po-Chih Chen